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Andres-Penares D, Cros A, Martínez-Pastor JP, et al. Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation. Nanotechnology. 2017;28(17):175701doi: 10.1088/1361-6528/aa669e.
Andres-Penares, D., Cros, A., Martínez-Pastor, J. P., & Sánchez-Royo, J. F. (2017). Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation. Nanotechnology, 28(17), 175701. https://doi.org/10.1088/1361-6528/aa669e
Andres-Penares, Daniel, et al. "Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation." Nanotechnology vol. 28,17 (2017): 175701. doi: https://doi.org/10.1088/1361-6528/aa669e
Andres-Penares D, Cros A, Martínez-Pastor JP, Sánchez-Royo JF. Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation. Nanotechnology. 2017 Apr 28;28(17):175701. doi: 10.1088/1361-6528/aa669e. Epub 2017 Mar 14. PMID: 28291012.
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Nanotechnology. 2017 Apr 28;28(17):175701. doi: 10.1088/1361-6528/aa669e. Epub 2017 Mar 14.

Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation.

Nanotechnology

Daniel Andres-Penares, Ana Cros, Juan P Martínez-Pastor, Juan F Sánchez-Royo

Affiliations

  1. ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, PO Box 22085, E-46071 Valencia, Spain.

PMID: 28291012 DOI: 10.1088/1361-6528/aa669e

Abstract

Gallium selenide is one of the most promising candidates to extend the window of band gap values provided by existing two-dimensional semiconductors deep into the visible potentially reaching the ultraviolet. However, the tunability of its band gap by means of quantum confinement effects is still unknown, probably due to poor nanosheet stability. Here, we demonstrate that the optical band gap band of GaSe nanosheets can be tuned by ∼120 meV from bulk to 8 nm thick. The luminescent response of very thin nanosheets (<8 nm) is strongly quenched due to early oxidation. Oxidation favors the emergence of sharp material nanospikes at the surface attributable to strain relaxation. Simultaneously, incorporated oxygen progressively replaces selenium giving rise to Ga

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