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Gül Ö, Zhang H, de Vries FK, et al. Hard Superconducting Gap in InSb Nanowires. Nano Lett. 2017;17(4):2690-2696doi: 10.1021/acs.nanolett.7b00540.
Gül, �. �., Zhang, H., de Vries, F. K., van Veen, J., Zuo, K., Mourik, V., Conesa-Boj, S., Nowak, M. P., van Woerkom, D. J., Quintero-Pérez, M., Cassidy, M. C., Geresdi, A., Koelling, S., Car, D., Plissard, S. R., Bakkers, E. P., & Kouwenhoven, L. P. (2017). Hard Superconducting Gap in InSb Nanowires. Nano letters, 17(4), 2690-2696. https://doi.org/10.1021/acs.nanolett.7b00540
Gül, Önder, et al. "Hard Superconducting Gap in InSb Nanowires." Nano letters vol. 17,4 (2017): 2690-2696. doi: https://doi.org/10.1021/acs.nanolett.7b00540
Gül Ö, Zhang H, de Vries FK, van Veen J, Zuo K, Mourik V, Conesa-Boj S, Nowak MP, van Woerkom DJ, Quintero-Pérez M, Cassidy MC, Geresdi A, Koelling S, Car D, Plissard SR, Bakkers EP, Kouwenhoven LP. Hard Superconducting Gap in InSb Nanowires. Nano Lett. 2017 Apr 12;17(4):2690-2696. doi: 10.1021/acs.nanolett.7b00540. Epub 2017 Apr 03. PMID: 28355877; PMCID: PMC5446204.
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Nano Lett. 2017 Apr 12;17(4):2690-2696. doi: 10.1021/acs.nanolett.7b00540. Epub 2017 Apr 03.

Hard Superconducting Gap in InSb Nanowires.

Nano letters

Önder Gül, Hao Zhang, Folkert K de Vries, Jasper van Veen, Kun Zuo, Vincent Mourik, Sonia Conesa-Boj, Michał P Nowak, David J van Woerkom, Marina Quintero-Pérez, Maja C Cassidy, Attila Geresdi, Sebastian Koelling, Diana Car, Sébastien R Plissard, Erik P A M Bakkers, Leo P Kouwenhoven

Affiliations

  1. QuTech, Delft University of Technology , 2600 GA Delft, The Netherlands.
  2. Kavli Institute of Nanoscience, Delft University of Technology , 2600 GA Delft, The Netherlands.
  3. Faculty of Physics and Applied Computer Science, AGH University of Science and Technology , al. A. Mickiewicza 30, 30-059 Kraków, Poland.
  4. Netherlands Organisation for Applied Scientific Research (TNO) , 2600 AD Delft, The Netherlands.
  5. Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.
  6. CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, F-31400 Toulouse, France.
  7. Microsoft Station Q Delft , 2600 GA Delft, The Netherlands.

PMID: 28355877 PMCID: PMC5446204 DOI: 10.1021/acs.nanolett.7b00540

Abstract

Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (∼0.5 T), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two-dimensional electron gases, and topological insulators and holds relevance for topological superconductivity and quantum computation.

Keywords: InSb; Majorana; hard gap; hybrid device; semiconductor nanowire; topological superconductivity

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