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Ming F, Mulugeta D, Tu W, et al. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping. Nat Commun. 2017;8:14721doi: 10.1038/ncomms14721.
Ming, F., Mulugeta, D., Tu, W., Smith, T. S., Vilmercati, P., Lee, G., Huang, Y. T., Diehl, R. D., Snijders, P. C., & Weitering, H. H. (2017). Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping. Nature communications, 814721. https://doi.org/10.1038/ncomms14721
Ming, Fangfei, et al. "Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping." Nature communications vol. 8 (2017): 14721. doi: https://doi.org/10.1038/ncomms14721
Ming F, Mulugeta D, Tu W, Smith TS, Vilmercati P, Lee G, Huang YT, Diehl RD, Snijders PC, Weitering HH. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping. Nat Commun. 2017 Mar 07;8:14721. doi: 10.1038/ncomms14721. PMID: 28266499; PMCID: PMC5343494.
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Nat Commun. 2017 Mar 07;8:14721. doi: 10.1038/ncomms14721.

Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

Nature communications

Fangfei Ming, Daniel Mulugeta, Weisong Tu, Tyler S Smith, Paolo Vilmercati, Geunseop Lee, Ying-Tzu Huang, Renee D Diehl, Paul C Snijders, Hanno H Weitering

Affiliations

  1. Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA.
  2. Joint Institute for Advanced Materials at The University of Tennessee, Knoxville, Tennessee 37996, USA.
  3. Department of Physics, Inha University, Inchon 402-751, Korea.
  4. Department of Physics, Penn State University, University Park, Pennsylvania 16802, USA.
  5. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.

PMID: 28266499 PMCID: PMC5343494 DOI: 10.1038/ncomms14721

Abstract

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

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