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Nano Lett. 2017 Apr 12;17(4):2178-2183. doi: 10.1021/acs.nanolett.6b04635. Epub 2017 Mar 01.

Full Characterization of the Mechanical Properties of 11-50 nm Ultrathin Films: Influence of Network Connectivity on the Poisson's Ratio.

Nano letters

Jorge N Hernandez-Charpak, Kathleen M Hoogeboom-Pot, Qing Li, Travis D Frazer, Joshua L Knobloch, Marie Tripp, Sean W King, Erik H Anderson, Weilun Chao, Margaret M Murnane, Henry C Kapteyn, Damiano Nardi

Affiliations

  1. JILA and Department of Physics, University of Colorado , Boulder, Colorado 80309-0440, United States.
  2. Intel Corp., 2501 NW 229th Avenue, Hillsboro, Oregon 97124, United States.
  3. Center for X-ray Optics, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.

PMID: 28240907 DOI: 10.1021/acs.nanolett.6b04635

Abstract

Precise characterization of the mechanical properties of ultrathin films is of paramount importance for both a fundamental understanding of nanoscale materials and for continued scaling and improvement of nanotechnology. In this work, we use coherent extreme ultraviolet beams to characterize the full elastic tensor of isotropic ultrathin films down to 11 nm in thickness. We simultaneously extract the Young's modulus and Poisson's ratio of low-k a-SiC:H films with varying degrees of hardness and average network connectivity in a single measurement. Contrary to past assumptions, we find that the Poisson's ratio of such films is not constant but rather can significantly increase from 0.25 to >0.4 for a network connectivity below a critical value of ∼2.5. Physically, the strong hydrogenation required to decrease the dielectric constant k results in bond breaking, lowering the network connectivity, and Young's modulus of the material but also decreases the compressibility of the film. This new understanding of ultrathin films demonstrates that coherent EUV beams present a new nanometrology capability that can probe a wide range of novel complex materials not accessible using traditional approaches.

Keywords: Ultrafast X-rays; nanomechanical properties; nanometrology; photoacoustics; ultrathin films

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