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Giannazzo F, Fisichella G, Piazza A, et al. Impact of contact resistance on the electrical properties of MoS. Beilstein J Nanotechnol. 2017;8:254-263doi: 10.3762/bjnano.8.28.
Giannazzo, F., Fisichella, G., Piazza, A., Di Franco, S., Greco, G., Agnello, S., & Roccaforte, F. (2017). Impact of contact resistance on the electrical properties of MoS. Beilstein journal of nanotechnology, 8254-263. https://doi.org/10.3762/bjnano.8.28
Giannazzo, Filippo, et al. "Impact of contact resistance on the electrical properties of MoS." Beilstein journal of nanotechnology vol. 8 (2017): 254-263. doi: https://doi.org/10.3762/bjnano.8.28
Giannazzo F, Fisichella G, Piazza A, Di Franco S, Greco G, Agnello S, Roccaforte F. Impact of contact resistance on the electrical properties of MoS. Beilstein J Nanotechnol. 2017 Jan 25;8:254-263. doi: 10.3762/bjnano.8.28. eCollection 2017. PMID: 28243564; PMCID: PMC5301949.
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Beilstein J Nanotechnol. 2017 Jan 25;8:254-263. doi: 10.3762/bjnano.8.28. eCollection 2017.

Impact of contact resistance on the electrical properties of MoS.

Beilstein journal of nanotechnology

Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte

Affiliations

  1. Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi, Strada VIII, n 5, 95121 Catania, Italy.
  2. Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi, Strada VIII, n 5, 95121 Catania, Italy; Department of Physics and Chemistry, University of Palermo, Via Archirafi 36, 90143 Palermo, Italy; Department of Physics and Astronomy, University of Catania, Via Santa Sofia, 64, 95123 Catania, Italy.
  3. Department of Physics and Chemistry, University of Palermo, Via Archirafi 36, 90143 Palermo, Italy.

PMID: 28243564 PMCID: PMC5301949 DOI: 10.3762/bjnano.8.28

Abstract

Molybdenum disulphide (MoS

Keywords: MoS2; contact resistance; mobility; temperature dependence; threshold voltage

References

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