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Bottegoni F, Zucchetti C, Dal Conte S, et al. Spin-Hall Voltage over a Large Length Scale in Bulk Germanium. Phys Rev Lett. 2017;118(16):167402doi: 10.1103/PhysRevLett.118.167402.
Bottegoni, F., Zucchetti, C., Dal Conte, S., Frigerio, J., Carpene, E., Vergnaud, C., Jamet, M., Isella, G., Ciccacci, F., Cerullo, G., & Finazzi, M. (2017). Spin-Hall Voltage over a Large Length Scale in Bulk Germanium. Physical review letters, 118(16), 167402. https://doi.org/10.1103/PhysRevLett.118.167402
Bottegoni, F, et al. "Spin-Hall Voltage over a Large Length Scale in Bulk Germanium." Physical review letters vol. 118,16 (2017): 167402. doi: https://doi.org/10.1103/PhysRevLett.118.167402
Bottegoni F, Zucchetti C, Dal Conte S, Frigerio J, Carpene E, Vergnaud C, Jamet M, Isella G, Ciccacci F, Cerullo G, Finazzi M. Spin-Hall Voltage over a Large Length Scale in Bulk Germanium. Phys Rev Lett. 2017 Apr 21;118(16):167402. doi: 10.1103/PhysRevLett.118.167402. Epub 2017 Apr 21. PMID: 28474919.
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Phys Rev Lett. 2017 Apr 21;118(16):167402. doi: 10.1103/PhysRevLett.118.167402. Epub 2017 Apr 21.

Spin-Hall Voltage over a Large Length Scale in Bulk Germanium.

Physical review letters

F Bottegoni, C Zucchetti, S Dal Conte, J Frigerio, E Carpene, C Vergnaud, M Jamet, G Isella, F Ciccacci, G Cerullo, M Finazzi

Affiliations

  1. LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.
  2. Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.
  3. IFN-CNR, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.
  4. Université Grenoble Alpes, INAC-SPINTEC, F38000 Grenoble, France.
  5. CEA-INAC-SPINTEC, F38054 Grenoble, France.

PMID: 28474919 DOI: 10.1103/PhysRevLett.118.167402

Abstract

We exploit the spin-Hall effect to generate a uniform pure spin current in an epitaxial n-doped Ge channel, and we detect the electrically induced spin accumulation, transverse to the injected charge current density, with polar magneto-optical Kerr microscopy at a low temperature. We show that a large spin density up to 400  μm^{-3} can be achieved at the edges of the 100-μm-wide Ge channel for an applied electric field lower than 5  mV/μm. We find that the spin density linearly decreases toward the center of the Ge bar, due to the large spin diffusion length, and such a decay is much slower than the exponential one observed in III-V semiconductors, allowing very large spin accumulations over a length scale of tens of micrometers. This lays the foundation for multiterminal spintronic devices, where different spin voltages can be exploited as inputs for magnetologic gates on the same Ge platform.

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