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Zhang J, Zhang L, Wang W, et al. Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer. Chem Sci. 2016;8(3):2407-2412doi: 10.1039/c6sc04091h.
Zhang, J., Zhang, L., Wang, W., Han, L., Jia, J. C., Tian, Z. W., Tian, Z. Q., & Zhan, D. (2017). Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer. Chemical science, 8(3), 2407-2412. https://doi.org/10.1039/c6sc04091h
Zhang, Jie, et al. "Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer." Chemical science vol. 8,3 (2017): 2407-2412. doi: https://doi.org/10.1039/c6sc04091h
Zhang J, Zhang L, Wang W, Han L, Jia JC, Tian ZW, Tian ZQ, Zhan D. Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer. Chem Sci. 2017 Mar 01;8(3):2407-2412. doi: 10.1039/c6sc04091h. Epub 2016 Dec 16. PMID: 28451347; PMCID: PMC5369340.
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