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J Microsc. 2017 Sep;267(3):272-279. doi: 10.1111/jmi.12563. Epub 2017 Apr 10.

Development of an improved Kelvin probe force microscope for accurate local potential measurements on biased electronic devices.

Journal of microscopy

N B Bercu, L Giraudet, O Simonetti, M Molinari

Affiliations

  1. Laboratoire de Recherche en Nanosciences (LRN EA4682), Université de Reims Champagne-Ardenne, Reims, France.

PMID: 28394454 DOI: 10.1111/jmi.12563

Abstract

An improved setup for accurate near-field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster-scan of the KPFM-AM, this setup allows to avoid potential measurement errors of the conventional Kelvin Probe Force Microscopy in the case of in situ measurements on biased electronic devices. This improved KPFM-AM setup has been tested on silicon-based devices and organic semiconductor-based devices such as organic field effect transistors (OFETs), showing differences up to 25% compared to the standard KPFM-AM lift-mode measurement method.

© 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Keywords: Atomic force microscopy; Kelvin probe force microscopy; electrical characterisation; instrumentation; organic electronics

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