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Sci Rep. 2017 Apr 20;7:46630. doi: 10.1038/srep46630.

Strong Reduction of Thermal Conductivity and Enhanced Thermoelectric Properties in CoSbS.

Scientific reports

Radoslaw Chmielowski, Sandip Bhattacharya, Stéphane Jacob, Daniel Péré, Alain Jacob, Kenzo Moriya, Bruno Delatouche, Pascal Roussel, Georg Madsen, Gilles Dennler

Affiliations

  1. IMRA Europe S.A.S., 220 rue Albert Caquot, BP 213, 06904 Sophia Antipolis, France.
  2. CMAT, ICAMS, Ruhr-Universität Bochum, Germany.
  3. Unité de Catalyse et Chimie du Solide, Ecole Nationale Supérieure de Chimie de Lille, Bat C7a - BP 90108, 59652 Villeneuve d'Ascq, France.
  4. Institute of Materials Chemistry, Technical University Vienna, A-1060 Wien, Austria.

PMID: 28425457 PMCID: PMC5397971 DOI: 10.1038/srep46630

Abstract

In order to reduce the thermal conductivity of CoSbS, a newly developed thermoelectric semiconductor, we have aimed at intentionally induce atomic disorder in its structure. This endeavor was guided by Density Functional Theory(DFT) calculations which indicated that substituting sulfur with selenium might be easily achievable experimentally because of the low formation energy of this point defect. Thereby, CoSbS

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