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Shu H, Tong Y, Guo J. Novel electronic and optical properties of ultrathin silicene/arsenene heterostructures and electric field effects. Phys Chem Chem Phys. 2017;19(16):10644-10650doi: 10.1039/c7cp00695k.
Shu, H., Tong, Y., & Guo, J. (2017). Novel electronic and optical properties of ultrathin silicene/arsenene heterostructures and electric field effects. Physical chemistry chemical physics : PCCP, 19(16), 10644-10650. https://doi.org/10.1039/c7cp00695k
Shu, Huabing, et al. "Novel electronic and optical properties of ultrathin silicene/arsenene heterostructures and electric field effects." Physical chemistry chemical physics : PCCP vol. 19,16 (2017): 10644-10650. doi: https://doi.org/10.1039/c7cp00695k
Shu H, Tong Y, Guo J. Novel electronic and optical properties of ultrathin silicene/arsenene heterostructures and electric field effects. Phys Chem Chem Phys. 2017 Apr 19;19(16):10644-10650. doi: 10.1039/c7cp00695k. PMID: 28397893.
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Phys Chem Chem Phys. 2017 Apr 19;19(16):10644-10650. doi: 10.1039/c7cp00695k.

Novel electronic and optical properties of ultrathin silicene/arsenene heterostructures and electric field effects.

Physical chemistry chemical physics : PCCP

Huabing Shu, Yilong Tong, Jiyuan Guo

Affiliations

  1. College of Mathematics and Physics, Jiangsu University of Science and Technology, Zhenjiang 212001, China. [email protected].

PMID: 28397893 DOI: 10.1039/c7cp00695k

Abstract

In zero-gap semimetallic silicene, introducing a sizable band gap without degrading its high carrier mobility is vital to its application in optoelectronic devices. Herein, we design a novel atomically thin system based on silicene and arsenene nanocomposites (Si/As heterostructure), which could open a direct band gap of about 125 meV at the K point in silicene. Moreover, its band gap is linearly controllable over a wide range even with a semiconductor-metal transition by the external electric field (E

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