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Taheri P, Fahad HM, Tosun M, et al. Nanoscale Junction Formation by Gas-Phase Monolayer Doping. ACS Appl Mater Interfaces. 2017;9(24):20648-20655doi: 10.1021/acsami.7b03974.
Taheri, P., Fahad, H. M., Tosun, M., Hettick, M., Kiriya, D., Chen, K., & Javey, A. (2017). Nanoscale Junction Formation by Gas-Phase Monolayer Doping. ACS applied materials & interfaces, 9(24), 20648-20655. https://doi.org/10.1021/acsami.7b03974
Taheri, Peyman, et al. "Nanoscale Junction Formation by Gas-Phase Monolayer Doping." ACS applied materials & interfaces vol. 9,24 (2017): 20648-20655. doi: https://doi.org/10.1021/acsami.7b03974
Taheri P, Fahad HM, Tosun M, Hettick M, Kiriya D, Chen K, Javey A. Nanoscale Junction Formation by Gas-Phase Monolayer Doping. ACS Appl Mater Interfaces. 2017 Jun 21;9(24):20648-20655. doi: 10.1021/acsami.7b03974. Epub 2017 Jun 07. PMID: 28548483.
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