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Macucci M, Tambellini G, Ovchinnikov D, et al. On current transients in MoS. Sci Rep. 2017;7(1):11575doi: 10.1038/s41598-017-11930-6.
Macucci, M., Tambellini, G., Ovchinnikov, D., Kis, A., Iannaccone, G., & Fiori, G. (2017). On current transients in MoS. Scientific reports, 7(1), 11575. https://doi.org/10.1038/s41598-017-11930-6
Macucci, Massimo, et al. "On current transients in MoS." Scientific reports vol. 7,1 (2017): 11575. doi: https://doi.org/10.1038/s41598-017-11930-6
Macucci M, Tambellini G, Ovchinnikov D, Kis A, Iannaccone G, Fiori G. On current transients in MoS. Sci Rep. 2017 Sep 14;7(1):11575. doi: 10.1038/s41598-017-11930-6. PMID: 28912464; PMCID: PMC5599678.
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Sci Rep. 2017 Sep 14;7(1):11575. doi: 10.1038/s41598-017-11930-6.

On current transients in MoS.

Scientific reports

Massimo Macucci, Gerry Tambellini, Dmitry Ovchinnikov, Andras Kis, Giuseppe Iannaccone, Gianluca Fiori

Affiliations

  1. Dipartimento di Ingegneria dell'Informazione, University of Pisa, 56122, Pisa, Italy.
  2. Institutes of Electrical engineering and Materials Science and Engineering, École Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland.
  3. Dipartimento di Ingegneria dell'Informazione, University of Pisa, 56122, Pisa, Italy. [email protected].

PMID: 28912464 PMCID: PMC5599678 DOI: 10.1038/s41598-017-11930-6

Abstract

We present an experimental investigation of slow transients in the gate and drain currents of MoS

References

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