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Srivastava S, Thomas JP, Heinig NF, et al. High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiO. ACS Appl Mater Interfaces. 2017;9(42):36989-36996doi: 10.1021/acsami.7b07971.
Srivastava, S., Thomas, J. P., Heinig, N. F., & Leung, K. T. (2017). High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiO. ACS applied materials & interfaces, 9(42), 36989-36996. https://doi.org/10.1021/acsami.7b07971
Srivastava, Saurabh, et al. "High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiO." ACS applied materials & interfaces vol. 9,42 (2017): 36989-36996. doi: https://doi.org/10.1021/acsami.7b07971
Srivastava S, Thomas JP, Heinig NF, Leung KT. High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiO. ACS Appl Mater Interfaces. 2017 Oct 25;9(42):36989-36996. doi: 10.1021/acsami.7b07971. Epub 2017 Oct 16. PMID: 28975787.
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ACS Appl Mater Interfaces. 2017 Oct 25;9(42):36989-36996. doi: 10.1021/acsami.7b07971. Epub 2017 Oct 16.

High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiO.

ACS applied materials & interfaces

Saurabh Srivastava, Joseph P Thomas, Nina F Heinig, K T Leung

Affiliations

  1. WATLab and Department of Chemistry, University of Waterloo , Waterloo, Ontario N2L3G1, Canada.

PMID: 28975787 DOI: 10.1021/acsami.7b07971

Abstract

The theoretical and practical realization of memristive devices has been hailed as the next step for nonvolatile memories, low-power remote sensing, and adaptive intelligent prototypes for neuromorphic and biological systems. However, the active materials of currently available memristors need to undergo an often destructive high-bias electroforming process in order to activate resistive switching. This limits their device performance in switching speed, endurance/retention, and power consumption upon high-density integration, due to excessive Joule heating. By employing a nanocrystalline oxygen-deficient TiO

Keywords: electroforming-free; interface-type switching; nonvolatile memories; oxygen-vacancy defect rich ultrananocrystallites; single-active-layer memristors

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