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Xie J, Huang K, Yu X, et al. Enhanced Electronic Properties of SnO. ACS Nano. 2017;11(9):9176-9182doi: 10.1021/acsnano.7b04070.
Xie, J., Huang, K., Yu, X., Yang, Z., Xiao, K., Qiang, Y., Zhu, X., Xu, L., Wang, P., Cui, C., & Yang, D. (2017). Enhanced Electronic Properties of SnO. ACS nano, 11(9), 9176-9182. https://doi.org/10.1021/acsnano.7b04070
Xie, Jiangsheng, et al. "Enhanced Electronic Properties of SnO." ACS nano vol. 11,9 (2017): 9176-9182. doi: https://doi.org/10.1021/acsnano.7b04070
Xie J, Huang K, Yu X, Yang Z, Xiao K, Qiang Y, Zhu X, Xu L, Wang P, Cui C, Yang D. Enhanced Electronic Properties of SnO. ACS Nano. 2017 Sep 26;11(9):9176-9182. doi: 10.1021/acsnano.7b04070. Epub 2017 Sep 06. PMID: 28858471.
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ACS Nano. 2017 Sep 26;11(9):9176-9182. doi: 10.1021/acsnano.7b04070. Epub 2017 Sep 06.

Enhanced Electronic Properties of SnO.

ACS nano

Jiangsheng Xie, Kun Huang, Xuegong Yu, Zhengrui Yang, Ke Xiao, Yaping Qiang, Xiaodong Zhu, Lingbo Xu, Peng Wang, Can Cui, Deren Yang

Affiliations

  1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China.
  2. Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China.

PMID: 28858471 DOI: 10.1021/acsnano.7b04070

Abstract

Tin dioxide (SnO

Keywords: electron transfer; electron traps; graphene quantum dots; perovskite solar cells; tin dioxide

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