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Lin CY, Zhu X, Tsai SH, et al. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS Nano. 2017;11(11):11015-11023doi: 10.1021/acsnano.7b05012.
Lin, C. Y., Zhu, X., Tsai, S. H., Tsai, S. P., Lei, S., Shi, Y., Li, L. J., Huang, S. J., Wu, W. F., Yeh, W. K., Su, Y. K., Wang, K. L., & Lan, Y. W. (2017). Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS nano, 11(11), 11015-11023. https://doi.org/10.1021/acsnano.7b05012
Lin, Che-Yu, et al. "Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon." ACS nano vol. 11,11 (2017): 11015-11023. doi: https://doi.org/10.1021/acsnano.7b05012
Lin CY, Zhu X, Tsai SH, Tsai SP, Lei S, Shi Y, Li LJ, Huang SJ, Wu WF, Yeh WK, Su YK, Wang KL, Lan YW. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS Nano. 2017 Nov 28;11(11):11015-11023. doi: 10.1021/acsnano.7b05012. Epub 2017 Oct 24. PMID: 28976732.
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ACS Nano. 2017 Nov 28;11(11):11015-11023. doi: 10.1021/acsnano.7b05012. Epub 2017 Oct 24.

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

ACS nano

Che-Yu Lin, Xiaodan Zhu, Shin-Hung Tsai, Shiao-Po Tsai, Sidong Lei, Yumeng Shi, Lain-Jong Li, Shyh-Jer Huang, Wen-Fa Wu, Wen-Kuan Yeh, Yan-Kuin Su, Kang L Wang, Yann-Wen Lan

Affiliations

  1. Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University , Tainan 701, Taiwan.
  2. Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  3. SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University , Shenzhen 518060, China.
  4. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955, Kingdom of Saudi Arabia.
  5. Advanced Optoelectronic Technology Center, National Cheng Kung University , Tainan 701, Taiwan.
  6. National Nano Device Laboratories, National Applied Research Laboratories , Hsinchu 30078, Taiwan.
  7. Department of Electrical Engineering, Kun Shan University , Tainan 710, Taiwan.
  8. Department of Physics, National Taiwan Normal University , Taipei 11677, Taiwan.

PMID: 28976732 DOI: 10.1021/acsnano.7b05012

Abstract

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe

Keywords: 2D materials; atomic layered; heterojunction bipolar transistors; lateral junction; resonant tunneling phenomenon

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