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Data Brief. 2017 Jul 26;14:246-250. doi: 10.1016/j.dib.2017.07.054. eCollection 2017 Oct.

Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer.

Data in brief

Md Billal Hosen, Ali Newaz Bahar, Md Karamot Ali, Md Asaduzzaman

Affiliations

  1. Department of Information and Communication Technology (ICT), Mawlana Bhashani Science and Technology University (MBSTU), Tangail 1902, Bangladesh.

PMID: 28861448 PMCID: PMC5567395 DOI: 10.1016/j.dib.2017.07.054

Abstract

This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.

Keywords: CIGS; Conversion efficiency; Numerical dataset; Solar cell simulation; ZnS buffer

References

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