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Appl Spectrosc. 2017 Sep;71(9):2136-2145. doi: 10.1177/0003702817696092. Epub 2017 Mar 20.

Origin of Analyte-Induced Porous Silicon Photoluminescence Quenching.

Applied spectroscopy

Justin M Reynard, Nathan S Van Gorder, Frank V Bright

Affiliations

  1. 1 Department of Chemistry, Erie Community College, Williamsville, NY, USA.
  2. 2 Department of Chemistry, Natural Sciences Complex, SUNY-Buffalo, Buffalo, NY, USA.

PMID: 28862036 DOI: 10.1177/0003702817696092

Abstract

We report on gaseous analyte-induced photoluminescence (PL) quenching of porous silicon, as-prepared (ap-pSi) and oxidized (ox-pSi). By using steady-state and emission wavelength-dependent time-resolved intensity luminescence measurements in concert with a global analysis scheme, we find that the analyte-induced quenching is best described by a three-component static quenching model. In the model, there are blue, green, and red emitters (associated with the nanocrystallite core and surface trap states) that each exhibit unique analyte-emitter association constants and these association constants are a consequence of differences in the pSi surface chemistries.

Keywords: Porous silicon; Stern–Volmer quenching; acetone; decay associated spectra; global analysis; photoluminescence; static quenching

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