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Gong F, Fang HH, Wang P, et al. Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions. Nanotechnology. 2017;doi: 10.1088/1361-6528/aa9172.
Gong, F., Fang, H. H., Wang, P., Su, M., Li, Q., Ho, J., Chen, X., Lu, W., Liao, L., Wang, J., & Hu, W. D. (2017). Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions. Nanotechnology, . https://doi.org/10.1088/1361-6528/aa9172
Gong, Fan, et al. "Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions." Nanotechnology vol. (2017). doi: https://doi.org/10.1088/1361-6528/aa9172
Gong F, Fang HH, Wang P, Su M, Li Q, Ho J, Chen X, Lu W, Liao L, Wang J, Hu WD. Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions. Nanotechnology. 2017 Oct 05; doi: 10.1088/1361-6528/aa9172. Epub 2017 Oct 05. PMID: 28981447.
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Nanotechnology. 2017 Oct 05; doi: 10.1088/1361-6528/aa9172. Epub 2017 Oct 05.

Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions.

Nanotechnology

Fan Gong, He Hai Fang, Peng Wang, Meng Su, Qing Li, Johnny Ho, Xiaoshuang Chen, Wei Lu, Lei Liao, Jun Wang, Wei-Da Hu

Affiliations

  1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, Hubei, CHINA.
  2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China, Shanghai, CHINA.
  3. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China, Wuhan, CHINA.
  4. Department of Physics and Material Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, China, Kowloon Tong, HONG KONG.
  5. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, Department of Physics, Wuhan University, Luojia Hill, Wuchang, Wuhan, Hubei, 430072, CHINA.
  6. School of Optoelectronic Information State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Science and Technology of China, Chengdu 610054, Chengdu, Sichuan, 610054, CHINA.

PMID: 28981447 DOI: 10.1088/1361-6528/aa9172

Abstract

Over the past few years, two-dimensional (2D) nanomaterials, such as MoS2, have been widely considered as the promising channel materials for next-generation high-performance phototransistors. However, their device performances are still mostly suffered from the slow photoresponse (e.g. with the time constant in the order of milliseconds) due to the relatively long channel length and the substantial surface defect induced carrier trapping, as well as the insufficient detectivity owing to the relatively large dark current. In this work, a simple multilayer MoS2 based photodetectors employing vertical Schottky junctions of Au-MoS2-ITO is demonstrated. This unique device structure can significantly suppress the dark current down to 10-12 A and enable the fast photoresponse of 64 μs, together with the stable responsivity of ~1 A/W and the high photocurrent to dark current ratio of ~106 at room temperature. This vertical-Schottky photodetector can also exhibit a wide detection range from visible to 1000 nm. All these results demonstrate clearly that the vertical Schottky structure is an effective configuration for achieving high-performance optoelectronic devices based on 2D materials.

© 2017 IOP Publishing Ltd.

Keywords: MoS<sub>2</sub>; Photodetectors; dark current; vertical Schottky junction

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