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Forti S, Rossi A, Büch H, et al. Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide. Nanoscale. 2017;9(42):16412-16419doi: 10.1039/c7nr05495e.
Forti, S., Rossi, A., Büch, H., Cavallucci, T., Bisio, F., Sala, A., Menteş, T. O., Locatelli, A., Magnozzi, M., Canepa, M., Müller, K., Link, S., Starke, U., Tozzini, V., & Coletti, C. (2017). Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide. Nanoscale, 9(42), 16412-16419. https://doi.org/10.1039/c7nr05495e
Forti, Stiven, et al. "Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide." Nanoscale vol. 9,42 (2017): 16412-16419. doi: https://doi.org/10.1039/c7nr05495e
Forti S, Rossi A, Büch H, Cavallucci T, Bisio F, Sala A, Menteş TO, Locatelli A, Magnozzi M, Canepa M, Müller K, Link S, Starke U, Tozzini V, Coletti C. Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide. Nanoscale. 2017 Nov 02;9(42):16412-16419. doi: 10.1039/c7nr05495e. PMID: 29058741.
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Nanoscale. 2017 Nov 02;9(42):16412-16419. doi: 10.1039/c7nr05495e.

Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide.

Nanoscale

Stiven Forti, Antonio Rossi, Holger Büch, Tommaso Cavallucci, Francesco Bisio, Alessandro Sala, Tevfik Onur Menteş, Andrea Locatelli, Michele Magnozzi, Maurizio Canepa, Kathrin Müller, Stefan Link, Ulrich Starke, Valentina Tozzini, Camilla Coletti

Affiliations

  1. Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy. [email protected].

PMID: 29058741 DOI: 10.1039/c7nr05495e

Abstract

This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulfide (WS

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