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Kang JH, Grivnin A, Bor E, et al. Robust Epitaxial Al Coating of Reclined InAs Nanowires. Nano Lett. 2017;17(12):7520-7527doi: 10.1021/acs.nanolett.7b03444.
Kang, J. H., Grivnin, A., Bor, E., Reiner, J., Avraham, N., Ronen, Y., Cohen, Y., Kacman, P., Shtrikman, H., & Beidenkopf, H. (2017). Robust Epitaxial Al Coating of Reclined InAs Nanowires. Nano letters, 17(12), 7520-7527. https://doi.org/10.1021/acs.nanolett.7b03444
Kang, Jung-Hyun, et al. "Robust Epitaxial Al Coating of Reclined InAs Nanowires." Nano letters vol. 17,12 (2017): 7520-7527. doi: https://doi.org/10.1021/acs.nanolett.7b03444
Kang JH, Grivnin A, Bor E, Reiner J, Avraham N, Ronen Y, Cohen Y, Kacman P, Shtrikman H, Beidenkopf H. Robust Epitaxial Al Coating of Reclined InAs Nanowires. Nano Lett. 2017 Dec 13;17(12):7520-7527. doi: 10.1021/acs.nanolett.7b03444. Epub 2017 Nov 14. PMID: 29115842.
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Nano Lett. 2017 Dec 13;17(12):7520-7527. doi: 10.1021/acs.nanolett.7b03444. Epub 2017 Nov 14.

Robust Epitaxial Al Coating of Reclined InAs Nanowires.

Nano letters

Jung-Hyun Kang, Anna Grivnin, Ella Bor, Jonathan Reiner, Nurit Avraham, Yuval Ronen, Yonatan Cohen, Perla Kacman, Hadas Shtrikman, Haim Beidenkopf

Affiliations

  1. Dept. of Condensed Matter Physics, Braun Center for Submicron Research, Weizmann Institute of Science , Rehovot 76100, Israel.
  2. Institute of Physics Polish Academy of Science , Al. Lotnikow 32/46, 02-668 Warsaw, Poland.

PMID: 29115842 DOI: 10.1021/acs.nanolett.7b03444

Abstract

It was recently shown that in situ epitaxial aluminum coating of indium arsenide nanowires is possible and yields superior properties relative to ex-situ evaporation of aluminum ( Nat. Mater. 2015 , 14 , 400 - 406 ). We demonstrate a robust and adaptive epitaxial growth protocol satisfying the need for producing an intimate contact between the aluminum superconductor and the indium arsenide nanowire. We show that the (001) indium arsenide substrate allows successful aluminum side-coating of reclined indium arsenide nanowires that emerge from (111)B microfacets. A robust, induced hard superconducting gap in the obtained indium arsenide/aluminum core/partial shell nanowires is clearly demonstrated. We compare epitaxial side-coating of round and hexagonal cross-section nanowires and find the surface roughness of the round nanowires to induce a more uniform aluminum profile. Consequently, the extended aluminum grains result in increased strain at the interface with the indium arsenide nanowire, which is found to induce dislocations penetrating into round nanowires only. A unique feature of proposed growth protocol is that it supports in situ epitaxial deposition of aluminum on all three arms of indium arsenide nanowire intersections in a single growth step. Such aluminum coated intersections play a key role in engineering topologically superconducting networks required for Majorana based quantum computation schemes.

Keywords: (001) substrate; MBE; in situ Al side-coating; nanowire intersections; reclining InAs nanowires

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