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Chejanovsky N, Kim Y, Zappe A, et al. Quantum Light in Curved Low Dimensional Hexagonal Boron Nitride Systems. Sci Rep. 2017;7(1):14758doi: 10.1038/s41598-017-15398-2.
Chejanovsky, N., Kim, Y., Zappe, A., Stuhlhofer, B., Taniguchi, T., Watanabe, K., Dasari, D., Finkler, A., Smet, J. H., & Wrachtrup, J. (2017). Quantum Light in Curved Low Dimensional Hexagonal Boron Nitride Systems. Scientific reports, 7(1), 14758. https://doi.org/10.1038/s41598-017-15398-2
Chejanovsky, Nathan, et al. "Quantum Light in Curved Low Dimensional Hexagonal Boron Nitride Systems." Scientific reports vol. 7,1 (2017): 14758. doi: https://doi.org/10.1038/s41598-017-15398-2
Chejanovsky N, Kim Y, Zappe A, Stuhlhofer B, Taniguchi T, Watanabe K, Dasari D, Finkler A, Smet JH, Wrachtrup J. Quantum Light in Curved Low Dimensional Hexagonal Boron Nitride Systems. Sci Rep. 2017 Nov 07;7(1):14758. doi: 10.1038/s41598-017-15398-2. PMID: 29116207; PMCID: PMC5676806.
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Sci Rep. 2017 Nov 07;7(1):14758. doi: 10.1038/s41598-017-15398-2.

Quantum Light in Curved Low Dimensional Hexagonal Boron Nitride Systems.

Scientific reports

Nathan Chejanovsky, Youngwook Kim, Andrea Zappe, Benjamin Stuhlhofer, Takashi Taniguchi, Kenji Watanabe, Durga Dasari, Amit Finkler, Jurgen H Smet, Jörg Wrachtrup

Affiliations

  1. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany.
  2. Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
  3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
  4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569, Stuttgart, Germany. [email protected].

PMID: 29116207 PMCID: PMC5676806 DOI: 10.1038/s41598-017-15398-2

Abstract

Low-dimensional wide bandgap semiconductors open a new playing field in quantum optics using sub-bandgap excitation. In this field, hexagonal boron nitride (h-BN) has been reported to host single quantum emitters (QEs), linking QE density to perimeters. Furthermore, curvature/perimeters in transition metal dichalcogenides (TMDCs) have demonstrated a key role in QE formation. We investigate a curvature-abundant BN system - quasi one-dimensional BN nanotubes (BNNTs) fabricated via a catalyst-free method. We find that non-treated BNNT is an abundant source of stable QEs and analyze their emission features down to single nanotubes, comparing dispersed/suspended material. Combining high spatial resolution of a scanning electron microscope, we categorize and pin-point emission origin to a scale of less than 20 nm, giving us a one-to-one validation of emission source with dimensions smaller than the laser excitation wavelength, elucidating nano-antenna effects. Two emission origins emerge: hybrid/entwined BNNT. By artificially curving h-BN flakes, similar QE spectral features are observed. The impact on emission of solvents used in commercial products and curved regions is also demonstrated. The 'out of the box' availability of QEs in BNNT, lacking processing contamination, is a milestone for unraveling their atomic features. These findings open possibilities for precision engineering of QEs, puts h-BN under a similar 'umbrella' of TMDC's QEs and provides a model explaining QEs spatial localization/formation using electron/ion irradiation and chemical etching.

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