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Lee SM, Yum JH, Yoon S, et al. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates. ACS Appl Mater Interfaces. 2017;9(48):41973-41979doi: 10.1021/acsami.7b13487.
Lee, S. M., Yum, J. H., Yoon, S., Larsen, E. S., Lee, W. C., Kim, S. K., Shervin, S., Wang, W., Ryou, J. H., Bielawski, C. W., & Oh, J. (2017). Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates. ACS applied materials & interfaces, 9(48), 41973-41979. https://doi.org/10.1021/acsami.7b13487
Lee, Seung Min, et al. "Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates." ACS applied materials & interfaces vol. 9,48 (2017): 41973-41979. doi: https://doi.org/10.1021/acsami.7b13487
Lee SM, Yum JH, Yoon S, Larsen ES, Lee WC, Kim SK, Shervin S, Wang W, Ryou JH, Bielawski CW, Oh J. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates. ACS Appl Mater Interfaces. 2017 Dec 06;9(48):41973-41979. doi: 10.1021/acsami.7b13487. Epub 2017 Nov 27. PMID: 29148718.
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ACS Appl Mater Interfaces. 2017 Dec 06;9(48):41973-41979. doi: 10.1021/acsami.7b13487. Epub 2017 Nov 27.

Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.

ACS applied materials & interfaces

Seung Min Lee, Jung Hwan Yum, Seonno Yoon, Eric S Larsen, Woo Chul Lee, Seong Keun Kim, Shahab Shervin, Weijie Wang, Jae-Hyun Ryou, Christopher W Bielawski, Jungwoo Oh

Affiliations

  1. School of Integrated Technology, Yonsei University , Incheon 21983, Republic of Korea.
  2. Yonsei Institute of Convergence Technology , Incheon 21983, Republic of Korea.
  3. Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea.
  4. Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea.
  5. Center for Electronic Materials, Korea Institute of Science and Technology (KIST) , Seoul 20792, Republic of Korea.
  6. Department of Mechanical Engineering, University of Houston , Houston, Texas 77204-4006, United States.
  7. Materials Science and Engineering Program and Texas Center for Superconductivity at UH (TcSUH), University of Houston , Houston, Texas 77204, United States.
  8. Department of Energy Engineering, UNIST , Ulsan 44919, Republic of Korea.

PMID: 29148718 DOI: 10.1021/acsami.7b13487

Abstract

We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO

Keywords: atomic-layer deposition; beryllium oxide; domain-matching epitaxy; gallium nitride; power devices

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