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Liu YH, Kao CH, Cheng TC, et al. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer. Nanomaterials (Basel). 2017;7(11)doi: 10.3390/nano7110385.
Liu, Y. H., Kao, C. H., Cheng, T. C., Wu, C. I., & Wang, J. C. (2017). Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer. Nanomaterials (Basel, Switzerland), 7(11), . https://doi.org/10.3390/nano7110385
Liu, Yu-Hua, et al. "Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer." Nanomaterials (Basel, Switzerland) vol. 7,11 (2017). doi: https://doi.org/10.3390/nano7110385
Liu YH, Kao CH, Cheng TC, Wu CI, Wang JC. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer. Nanomaterials (Basel). 2017 Nov 10;7(11). doi: 10.3390/nano7110385. PMID: 29125567; PMCID: PMC5707602.
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Nanomaterials (Basel). 2017 Nov 10;7(11). doi: 10.3390/nano7110385.

Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer.

Nanomaterials (Basel, Switzerland)

Yu-Hua Liu, Chyuan-Haur Kao, Tsung-Chin Cheng, Chih-I Wu, Jer-Chyi Wang

Affiliations

  1. Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan. [email protected].
  2. Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan. [email protected].
  3. Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City 24301, Taiwan. [email protected].
  4. Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan 33305, Taiwan. [email protected].
  5. Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan. [email protected].
  6. Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan. [email protected].
  7. Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan. [email protected].
  8. Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 31057, Taiwan. [email protected].
  9. Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan. [email protected].
  10. Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City 24301, Taiwan. [email protected].
  11. Department of Neurosurgery, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan 33305, Taiwan. [email protected].

PMID: 29125567 PMCID: PMC5707602 DOI: 10.3390/nano7110385

Abstract

Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF₄ plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si-F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS), while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS). In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS) to support the bandgap engineering. The reactive power of the CF₄ plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs) and the tunneling oxide (TO) layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 10⁴ s and a nearly negligible increase in charge loss at 85 °C of the CF₄-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

Keywords: CF4 plasma; bandgap engineering; blocking oxide; data retention; gate injection; gold nanoparticle (Au-NP); non-volatile memory (NVM)

Conflict of interest statement

The authors declare no conflict of interest.

References

  1. Nanotechnology. 2012 Nov 30;23(47):475201 - PubMed
  2. Soft Matter. 2014 Jun 7;10(21):3842-9 - PubMed

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