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Maiti DK, Debnath S, Nawaz SM, et al. Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices. Sci Rep. 2017;7(1):13308doi: 10.1038/s41598-017-13754-w.
Maiti, D. K., Debnath, S., Nawaz, S. M., Dey, B., Dinda, E., Roy, D., Ray, S., Mallik, A., & Hussain, S. A. (2017). Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices. Scientific reports, 7(1), 13308. https://doi.org/10.1038/s41598-017-13754-w
Maiti, Dilip K, et al. "Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices." Scientific reports vol. 7,1 (2017): 13308. doi: https://doi.org/10.1038/s41598-017-13754-w
Maiti DK, Debnath S, Nawaz SM, Dey B, Dinda E, Roy D, Ray S, Mallik A, Hussain SA. Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices. Sci Rep. 2017 Oct 17;7(1):13308. doi: 10.1038/s41598-017-13754-w. PMID: 29042660; PMCID: PMC5645374.
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Sci Rep. 2017 Oct 17;7(1):13308. doi: 10.1038/s41598-017-13754-w.

Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices.

Scientific reports

Dilip K Maiti, Sudipto Debnath, Sk Masum Nawaz, Bapi Dey, Enakhi Dinda, Dipanwita Roy, Sudipta Ray, Abhijit Mallik, Syed A Hussain

Affiliations

  1. Department of Chemistry, University of Calcutta, 92 A. P. C. Road, Kolkata, 700009, India. [email protected].
  2. Department of Chemistry, University of Calcutta, 92 A. P. C. Road, Kolkata, 700009, India.
  3. Department of Electronic Science, 92 A. P. C. Road, Kolkata, 700009, India.
  4. Department of Physics, Tripura University, Suryamaninagar, 799022, Tripura, India.
  5. Department of Electronic Science, 92 A. P. C. Road, Kolkata, 700009, India. [email protected].
  6. Department of Physics, Tripura University, Suryamaninagar, 799022, Tripura, India. [email protected].

PMID: 29042660 PMCID: PMC5645374 DOI: 10.1038/s41598-017-13754-w

Abstract

A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1(8:SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 (8:SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.

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