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Scott SA, Deneke C, Paskiewicz DM, et al. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. ACS Appl Mater Interfaces. 2017;9(48):42372-42382doi: 10.1021/acsami.7b14291.
Scott, S. A., Deneke, C., Paskiewicz, D. M., Ryu, H. J., Malachias, A., Baunack, S., Schmidt, O. G., Savage, D. E., Eriksson, M. A., & Lagally, M. G. (2017). Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. ACS applied materials & interfaces, 9(48), 42372-42382. https://doi.org/10.1021/acsami.7b14291
Scott, Shelley A, et al. "Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States." ACS applied materials & interfaces vol. 9,48 (2017): 42372-42382. doi: https://doi.org/10.1021/acsami.7b14291
Scott SA, Deneke C, Paskiewicz DM, Ryu HJ, Malachias A, Baunack S, Schmidt OG, Savage DE, Eriksson MA, Lagally MG. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. ACS Appl Mater Interfaces. 2017 Dec 06;9(48):42372-42382. doi: 10.1021/acsami.7b14291. Epub 2017 Nov 27. PMID: 29129058.
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ACS Appl Mater Interfaces. 2017 Dec 06;9(48):42372-42382. doi: 10.1021/acsami.7b14291. Epub 2017 Nov 27.

Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States.

ACS applied materials & interfaces

Shelley A Scott, Christoph Deneke, Deborah M Paskiewicz, Hyuk Ju Ryu, Angelo Malachias, Stefan Baunack, Oliver G Schmidt, Donald E Savage, Mark A Eriksson, Max G Lagally

Affiliations

  1. University of Wisconsin , Madison, Wisconsin 53706, United States.
  2. Laboratoria Nacional de Nanotechnologia, Centro Nacional de Pesquisa em Energia e Materiais , 13083-100 Campinas, Brazil.
  3. IFW Dresden , Helmholtzstrasse 20, D-01069 Dresden, Germany.
  4. Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas (Unicamp) , 13083-859 Campinas, São Paulo, Brazil.
  5. Universidade Federal de Minas Gerais , CP 702, 30123-970 Belo Horizonte, Brazil.

PMID: 29129058 DOI: 10.1021/acsami.7b14291

Abstract

Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.

Keywords: epitaxy; hybrid crystalline materials; interfaces; selective growth; silicon nanomembranes; strain engineering

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