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Goswami S, Matula AJ, Rath SP, et al. Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nat Mater. 2017;17(1):103doi: 10.1038/nmat5059.
Goswami, S., Matula, A. J., Rath, S. P., Hedström, S., Saha, S., Annamalai, M., Sengupta, D., Patra, A., Ghosh, S., Jani, H., Sarkar, S., Motapothula, M. R., Nijhuis, C. A., Martin, J., Goswami, S., Batista, V. S., & Venkatesan, T. (2017). Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nature materials, 17(1), 103. https://doi.org/10.1038/nmat5059
Goswami, Sreetosh, et al. "Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics." Nature materials vol. 17,1 (2017): 103. doi: https://doi.org/10.1038/nmat5059
Goswami S, Matula AJ, Rath SP, Hedström S, Saha S, Annamalai M, Sengupta D, Patra A, Ghosh S, Jani H, Sarkar S, Motapothula MR, Nijhuis CA, Martin J, Goswami S, Batista VS, Venkatesan T. Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nat Mater. 2017 Dec 19;17(1):103. doi: 10.1038/nmat5059. PMID: 29255223.
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