Display options
Cite
Steinleitner P, Merkl P, Graf A, et al. Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure. Nano Lett. 2018;18(2):1402-1409doi: 10.1021/acs.nanolett.7b05132.
Steinleitner, P., Merkl, P., Graf, A., Nagler, P., Watanabe, K., Taniguchi, T., Zipfel, J., Schüller, C., Korn, T., Chernikov, A., Brem, S., Selig, M., Berghäuser, G., Malic, E., & Huber, R. (2018). Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure. Nano letters, 18(2), 1402-1409. https://doi.org/10.1021/acs.nanolett.7b05132
Steinleitner, Philipp, et al. "Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure." Nano letters vol. 18,2 (2018): 1402-1409. doi: https://doi.org/10.1021/acs.nanolett.7b05132
Steinleitner P, Merkl P, Graf A, Nagler P, Watanabe K, Taniguchi T, Zipfel J, Schüller C, Korn T, Chernikov A, Brem S, Selig M, Berghäuser G, Malic E, Huber R. Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure. Nano Lett. 2018 Feb 14;18(2):1402-1409. doi: 10.1021/acs.nanolett.7b05132. Epub 2018 Jan 30. PMID: 29365262.
Copy Download .nbib Format: NLM
Share it on

Nano Lett. 2018 Feb 14;18(2):1402-1409. doi: 10.1021/acs.nanolett.7b05132. Epub 2018 Jan 30.

Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure.

Nano letters

Philipp Steinleitner, Philipp Merkl, Alexander Graf, Philipp Nagler, Kenji Watanabe, Takashi Taniguchi, Jonas Zipfel, Christian Schüller, Tobias Korn, Alexey Chernikov, Samuel Brem, Malte Selig, Gunnar Berghäuser, Ermin Malic, Rupert Huber

Affiliations

  1. Department of Physics, University of Regensburg , Universitätsstraße 31, 93053 Regensburg, Germany.
  2. National Institute for Material Science , 305-0044 1-1 Namiki Tsukuba, Ibaraki, Japan.
  3. Department of Physics, Chalmers University of Technology , Fysikgården 1, 41258 Gothenburg, Sweden.
  4. Department of Theoretical Physics, Technical University of Berlin , Hardenbergstraße 36, 10623 Berlin, Germany.

PMID: 29365262 DOI: 10.1021/acs.nanolett.7b05132

Abstract

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe

Keywords: Dichalcogenides; atomically thin 2D crystals; dark excitons.; dielectric engineering; van der Waals heterostructures

Publication Types