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Park JK, Takagi S, Takenaka M. InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform. Opt Express. 2018;26(4):4842-4852doi: 10.1364/OE.26.004842.
Park, J. K., Takagi, S., & Takenaka, M. (2018). InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform. Optics express, 26(4), 4842-4852. https://doi.org/10.1364/OE.26.004842
Park, Jin-Kown, et al. "InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform." Optics express vol. 26,4 (2018): 4842-4852. doi: https://doi.org/10.1364/OE.26.004842
Park JK, Takagi S, Takenaka M. InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform. Opt Express. 2018 Feb 19;26(4):4842-4852. doi: 10.1364/OE.26.004842. PMID: 29475329.
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Opt Express. 2018 Feb 19;26(4):4842-4852. doi: 10.1364/OE.26.004842.

InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

Optics express

Jin-Kown Park, Shinichi Takagi, Mitsuru Takenaka

PMID: 29475329 DOI: 10.1364/OE.26.004842

Abstract

We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

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