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Kalanyan B, Kimes WA, Beams R, et al. Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS. Chem Mater. 2017;29(15):6279-6288doi: 10.1021/acs.chemmater.7b01367.
Kalanyan, B., Kimes, W. A., Beams, R., Stranick, S. J., Garratt, E., Kalish, I., Davydov, A. V., Kanjolia, R. K., & Maslar, J. E. (2017). Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS. Chemistry of materials : a publication of the American Chemical Society, 29(15), 6279-6288. https://doi.org/10.1021/acs.chemmater.7b01367
Kalanyan, Berc, et al. "Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS." Chemistry of materials : a publication of the American Chemical Society vol. 29,15 (2017): 6279-6288. doi: https://doi.org/10.1021/acs.chemmater.7b01367
Kalanyan B, Kimes WA, Beams R, Stranick SJ, Garratt E, Kalish I, Davydov AV, Kanjolia RK, Maslar JE. Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS. Chem Mater. 2017 Aug 08;29(15):6279-6288. doi: 10.1021/acs.chemmater.7b01367. Epub 2017 Jul 12. PMID: 29545674; PMCID: PMC5846631.
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Chem Mater. 2017 Aug 08;29(15):6279-6288. doi: 10.1021/acs.chemmater.7b01367. Epub 2017 Jul 12.

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS.

Chemistry of materials : a publication of the American Chemical Society

Berc Kalanyan, William A Kimes, Ryan Beams, Stephan J Stranick, Elias Garratt, Irina Kalish, Albert V Davydov, Ravindra K Kanjolia, James E Maslar

Affiliations

  1. Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.
  2. EMD Performance Materials, Haverhill, Massachusetts 01835, United States.

PMID: 29545674 PMCID: PMC5846631 DOI: 10.1021/acs.chemmater.7b01367

Abstract

High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metalorganic chemical vapor deposition (MOCVD) route for MoS

Keywords: CVD; MOCVD; MoS2; metalorganic chemistry; transition metal dichalcogenides

Conflict of interest statement

Notes The authors declare no competing financial interest.

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