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Obata S, Sato M, Akada K, et al. High degree reduction and restoration of graphene oxide on SiO. Nanotechnology. 2018;29(24):245603doi: 10.1088/1361-6528/aab73e.
Obata, S., Sato, M., Akada, K., & Saiki, K. (2018). High degree reduction and restoration of graphene oxide on SiO. Nanotechnology, 29(24), 245603. https://doi.org/10.1088/1361-6528/aab73e
Obata, Seiji, et al. "High degree reduction and restoration of graphene oxide on SiO." Nanotechnology vol. 29,24 (2018): 245603. doi: https://doi.org/10.1088/1361-6528/aab73e
Obata S, Sato M, Akada K, Saiki K. High degree reduction and restoration of graphene oxide on SiO. Nanotechnology. 2018 Jun 15;29(24):245603. doi: 10.1088/1361-6528/aab73e. Epub 2018 Mar 16. PMID: 29547130.
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Nanotechnology. 2018 Jun 15;29(24):245603. doi: 10.1088/1361-6528/aab73e. Epub 2018 Mar 16.

High degree reduction and restoration of graphene oxide on SiO.

Nanotechnology

Seiji Obata, Minoru Sato, Keishi Akada, Koichiro Saiki

PMID: 29547130 DOI: 10.1088/1361-6528/aab73e

Abstract

A high throughput synthesis method of graphene has been required for a long time to apply graphene to industrial applications. Of the various synthesis methods, the chemical exfoliation of graphite via graphene oxide (GO) is advantageous as far as productivity is concerned; however, the quality of the graphene produced by this method is far inferior to that synthesized by other methods, such as chemical vapor deposition on metals. Developing an effective reduction and restoration method for GO on dielectric substrates has been therefore a key issue. Here, we present a method for changing GO deposited on a dielectric substrate into high crystallinity graphene at 550 °C; this method uses CH

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