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Jha SK, Kumari R, Choudhary S, et al. Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide. J Nanosci Nanotechnol. 2018;18(1):614-622doi: 10.1166/jnn.2018.13931.
Jha, S. K., Kumari, R., Choudhary, S., Guha, P., Satyam, P. V., Yadav, B. S., Naqvi, Z., Kushvaha, S. S., Ratnesh, R. K., Mehata, M. S., Jain, A., Panwar, A. K., Singh, F., & Tyagi, P. K. (2018). Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide. Journal of nanoscience and nanotechnology, 18(1), 614-622. https://doi.org/10.1166/jnn.2018.13931
Jha, Sarvottam K, et al. "Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide." Journal of nanoscience and nanotechnology vol. 18,1 (2018): 614-622. doi: https://doi.org/10.1166/jnn.2018.13931
Jha SK, Kumari R, Choudhary S, Guha P, Satyam PV, Yadav BS, Naqvi Z, Kushvaha SS, Ratnesh RK, Mehata MS, Jain A, Panwar AK, Singh F, Tyagi PK. Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide. J Nanosci Nanotechnol. 2018 Jan 01;18(1):614-622. doi: 10.1166/jnn.2018.13931. PMID: 29768887.
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J Nanosci Nanotechnol. 2018 Jan 01;18(1):614-622. doi: 10.1166/jnn.2018.13931.

Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide.

Journal of nanoscience and nanotechnology

Sarvottam K Jha, Reetu Kumari, Shubham Choudhary, Puspendu Guha, P V Satyam, Brajesh S Yadav, Zainab Naqvi, S S Kushvaha, R K Ratnesh, M S Mehata, Aditya Jain, Amrish K Panwar, Fouran Singh, Pawan K Tyagi

Affiliations

  1. Deptartment of Applied Physics, Delhi Technological University, Delhi 110042, India.
  2. Institute of Physics, SachivalayaMarg, Bhubaneswar 751005, India.
  3. Solid State Physics Laboratory, Lucknow Road, Timarpur 110054, Delhi, India.
  4. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012, India.
  5. Materials Science Group Inter University Accelerator Centre (IUAC), New Delhi 110067, India.

PMID: 29768887 DOI: 10.1166/jnn.2018.13931

Abstract

In this paper, we have reported a simple and efficient method for the synthesis of uniform, highly conducting single or few layer molybdenum disulfide (MoS2) on large scale. Scanning Electron Microscopy (SEM) and High Resolution Transmission Electron Microscopy (HRTEM) have been used for the confirmation of mono or few layered nature of the as-synthesized MoS2 sheets. X-ray Photoelectron Spectroscopy (XPS), X-Ray Diffraction (XRD) and Raman Spectroscopy have also been used to study the elemental, phase, and molecular composition of the sample. Optical properties of as-synthesized sample have been probed by measuring absorption and photoluminescence spectra which also compliment the formation of mono and few layers MoS2 Current-voltage (I-V ) characteristics of as-synthesized sample in the pellet form reveal that MoS2 sheets have an ohmic character and found to be highly conducting. Besides characterizing the as-synthesized sample, we have also proposed the mechanism and factors which play a decisive role in formation of high quality MoS2 sheets.

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