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Matsuzaki K, Harada K, Kumagai Y, et al. High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design. Adv Mater. 2018;30(31):e1801968doi: 10.1002/adma.201801968.
Matsuzaki, K., Harada, K., Kumagai, Y., Koshiya, S., Kimoto, K., Ueda, S., Sasase, M., Maeda, A., Susaki, T., Kitano, M., Oba, F., & Hosono, H. (2018). High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design. Advanced materials (Deerfield Beach, Fla.), 30(31), e1801968. https://doi.org/10.1002/adma.201801968
Matsuzaki, Kosuke, et al. "High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design." Advanced materials (Deerfield Beach, Fla.) vol. 30,31 (2018): e1801968. doi: https://doi.org/10.1002/adma.201801968
Matsuzaki K, Harada K, Kumagai Y, Koshiya S, Kimoto K, Ueda S, Sasase M, Maeda A, Susaki T, Kitano M, Oba F, Hosono H. High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design. Adv Mater. 2018 Aug;30(31):e1801968. doi: 10.1002/adma.201801968. Epub 2018 Jun 19. PMID: 29920799.
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Adv Mater. 2018 Aug;30(31):e1801968. doi: 10.1002/adma.201801968. Epub 2018 Jun 19.

High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design.

Advanced materials (Deerfield Beach, Fla.)

Kosuke Matsuzaki, Kou Harada, Yu Kumagai, Shogo Koshiya, Koji Kimoto, Shigenori Ueda, Masato Sasase, Akihiro Maeda, Tomofumi Susaki, Masaaki Kitano, Fumiyasu Oba, Hideo Hosono

Affiliations

  1. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, 226-8503, Japan.
  2. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, 226-8503, Japan.
  3. Electron Microscopy Group, Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
  4. Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan.
  5. Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
  6. Center for Materials Research by Information Integration, Research and Services Division of Materials Data and Integrated System, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.

PMID: 29920799 DOI: 10.1002/adma.201801968

Abstract

Thin-film photovoltaics (PV) have emerged as a technology that can meet the growing demands for efficient and low-cost large-scale cells. However, the photoabsorbers currently in use contain expensive or toxic elements, and the difficulty in bipolar doping, particularly in a device structure, requires elaborate optimization of the heterostructures for improving the efficiency. This study shows that bipolar doping with high hole and electron mobilities in copper nitride (Cu

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords: bipolar doping; direct nitriding; doping design

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