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Goubet N, Livache C, Martinez B, et al. Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties. Nano Lett. 2018;18(7):4590-4597doi: 10.1021/acs.nanolett.8b01861.
Goubet, N., Livache, C., Martinez, B., Xu, X. Z., Ithurria, S., Royer, S., Cruguel, H., Patriarche, G., Ouerghi, A., Silly, M., Dubertret, B., & Lhuillier, E. (2018). Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties. Nano letters, 18(7), 4590-4597. https://doi.org/10.1021/acs.nanolett.8b01861
Goubet, Nicolas, et al. "Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties." Nano letters vol. 18,7 (2018): 4590-4597. doi: https://doi.org/10.1021/acs.nanolett.8b01861
Goubet N, Livache C, Martinez B, Xu XZ, Ithurria S, Royer S, Cruguel H, Patriarche G, Ouerghi A, Silly M, Dubertret B, Lhuillier E. Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties. Nano Lett. 2018 Jul 11;18(7):4590-4597. doi: 10.1021/acs.nanolett.8b01861. Epub 2018 Jun 07. PMID: 29812951.
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Nano Lett. 2018 Jul 11;18(7):4590-4597. doi: 10.1021/acs.nanolett.8b01861. Epub 2018 Jun 07.

Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties.

Nano letters

Nicolas Goubet, Clément Livache, Bertille Martinez, Xiang Zhen Xu, Sandrine Ithurria, Sébastien Royer, Hervé Cruguel, Gilles Patriarche, Abdelkarim Ouerghi, Mathieu Silly, Benoit Dubertret, Emmanuel Lhuillier

Affiliations

  1. Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France.
  2. Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France.
  3. Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N Marcoussis , 91460 Marcoussis , France.
  4. Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette , Cedex , France.

PMID: 29812951 DOI: 10.1021/acs.nanolett.8b01861

Abstract

The use of intraband transition is an interesting alternative path for the design of optically active complex colloidal materials in the mid-infrared range. However, so far, the performance obtained for photodetection based on intraband transition remains much smaller than the one relying on interband transition in narrow-band-gap materials operating at the same wavelength. New strategies have to be developed to make intraband materials more effective. Here, we propose growing a heterostructure of HgSe/HgTe as a means of achieving enhanced intraband-based photoconduction. We first tackle the synthetic challenge of growing a heterostructure on soft (Hg-based) material. The electronic spectrum of the grown heterostructure is then investigated using a combination of numerical simulation, infrared spectroscopy, transport measurement, and photoemission. We report a type-II band alignment with reduced doping compared with a core-only object and boosted hole conduction. Finally, we probe the photoconductive properties of the heterostructure while resonantly exciting the intraband transition by using a high-power-density quantum cascade laser. Compared to the previous generation of material based on core-only HgSe, the heterostructures have a lower dark current, stronger temperature dependence, faster photoresponse (with a time response below 50 μs), and detectivity increased by a factor of 30.

Keywords: HgSe/HgTe heterostructures; intraband transition; mid-infrared; narrow-band-gap nanocrystals

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