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Hiller D, López-Vidrier J, Nomoto K, et al. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride. Beilstein J Nanotechnol. 2018;9:1501-1511doi: 10.3762/bjnano.9.141.
Hiller, D., López-Vidrier, J., Nomoto, K., Wahl, M., Bock, W., Chlouba, T., Trojánek, F., Gutsch, S., Zacharias, M., König, D., Malý, P., & Kopnarski, M. (2018). Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride. Beilstein journal of nanotechnology, 91501-1511. https://doi.org/10.3762/bjnano.9.141
Hiller, Daniel, et al. "Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride." Beilstein journal of nanotechnology vol. 9 (2018): 1501-1511. doi: https://doi.org/10.3762/bjnano.9.141
Hiller D, López-Vidrier J, Nomoto K, Wahl M, Bock W, Chlouba T, Trojánek F, Gutsch S, Zacharias M, König D, Malý P, Kopnarski M. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride. Beilstein J Nanotechnol. 2018 May 18;9:1501-1511. doi: 10.3762/bjnano.9.141. eCollection 2018. PMID: 29977683; PMCID: PMC6009393.
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Beilstein J Nanotechnol. 2018 May 18;9:1501-1511. doi: 10.3762/bjnano.9.141. eCollection 2018.

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride.

Beilstein journal of nanotechnology

Daniel Hiller, Julian López-Vidrier, Keita Nomoto, Michael Wahl, Wolfgang Bock, Tomáš Chlouba, František Trojánek, Sebastian Gutsch, Margit Zacharias, Dirk König, Petr Malý, Michael Kopnarski

Affiliations

  1. Research School of Engineering, Australian National University (ANU), Canberra, Australia.
  2. Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany.
  3. The University of Sydney, Faculty of Engineering and Information Technologies, School of Aerospace, Mechanical and Mechatronic Engineering, Sydney, Australia.
  4. Institute for Surface and Thin Film Analysis GmbH (IFOS), Kaiserslautern, Germany.
  5. Department of Chemical Physics and Optics, Charles University, Prague, Czech Republic.
  6. Integrated Materials Design Centre (IMDC), University of New South Wales (UNSW), Sydney, Australia.

PMID: 29977683 PMCID: PMC6009393 DOI: 10.3762/bjnano.9.141

Abstract

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH

Keywords: atom probe tomography; doping; photoluminescence; silicon nanocrystals; transient transmission

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