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Walsh LA, Green AJ, Addou R, et al. Fermi Level Manipulation through Native Doping in the Topological Insulator Bi. ACS Nano. 2018;12(6):6310-6318doi: 10.1021/acsnano.8b03414.
Walsh, L. A., Green, A. J., Addou, R., Nolting, W., Cormier, C. R., Barton, A. T., Mowll, T. R., Yue, R., Lu, N., Kim, J., Kim, M. J., LaBella, V. P., Ventrice, C. A., McDonnell, S., Vandenberghe, W. G., Wallace, R. M., Diebold, A., & Hinkle, C. L. (2018). Fermi Level Manipulation through Native Doping in the Topological Insulator Bi. ACS nano, 12(6), 6310-6318. https://doi.org/10.1021/acsnano.8b03414
Walsh, Lee A, et al. "Fermi Level Manipulation through Native Doping in the Topological Insulator Bi." ACS nano vol. 12,6 (2018): 6310-6318. doi: https://doi.org/10.1021/acsnano.8b03414
Walsh LA, Green AJ, Addou R, Nolting W, Cormier CR, Barton AT, Mowll TR, Yue R, Lu N, Kim J, Kim MJ, LaBella VP, Ventrice CA, McDonnell S, Vandenberghe WG, Wallace RM, Diebold A, Hinkle CL. Fermi Level Manipulation through Native Doping in the Topological Insulator Bi. ACS Nano. 2018 Jun 26;12(6):6310-6318. doi: 10.1021/acsnano.8b03414. Epub 2018 Jun 08. PMID: 29874037.
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ACS Nano. 2018 Jun 26;12(6):6310-6318. doi: 10.1021/acsnano.8b03414. Epub 2018 Jun 08.

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi.

ACS nano

Lee A Walsh, Avery J Green, Rafik Addou, Westly Nolting, Christopher R Cormier, Adam T Barton, Tyler R Mowll, Ruoyu Yue, Ning Lu, Jiyoung Kim, Moon J Kim, Vincent P LaBella, Carl A Ventrice, Stephen McDonnell, William G Vandenberghe, Robert M Wallace, Alain Diebold, Christopher L Hinkle

Affiliations

  1. Department of Materials Science and Engineering , University of Texas at Dallas , Richardson , Texas 75080 , United States.
  2. Tyndall National Institute, University College Cork , Lee Maltings Complex , Cork T12R5CP , Ireland.
  3. Colleges of Nanoscale Science and Engineering , SUNY Polytechnic Institute , Albany , New York 12203 , United States.
  4. Department of Materials Science and Engineering , University of Virginia , Charlottesville , Virginia 22904 , United States.

PMID: 29874037 DOI: 10.1021/acsnano.8b03414

Abstract

The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering. However, topological insulator based devices have been underwhelming to date primarily due to the presence of parasitic issues. An important example is the challenge of suppressing bulk conduction in Bi

Keywords: Fermi level; bismuth selenide; doping; molecular beam epitaxy; topological insulator

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