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Stolyarchuk N, Markurt T, Courville A, et al. Intentional polarity conversion of AlN epitaxial layers by oxygen. Sci Rep. 2018;8(1):14111doi: 10.1038/s41598-018-32489-w.
Stolyarchuk, N., Markurt, T., Courville, A., March, K., Zúñiga-Pérez, J., Vennéguès, P., & Albrecht, M. (2018). Intentional polarity conversion of AlN epitaxial layers by oxygen. Scientific reports, 8(1), 14111. https://doi.org/10.1038/s41598-018-32489-w
Stolyarchuk, N, et al. "Intentional polarity conversion of AlN epitaxial layers by oxygen." Scientific reports vol. 8,1 (2018): 14111. doi: https://doi.org/10.1038/s41598-018-32489-w
Stolyarchuk N, Markurt T, Courville A, March K, Zúñiga-Pérez J, Vennéguès P, Albrecht M. Intentional polarity conversion of AlN epitaxial layers by oxygen. Sci Rep. 2018 Sep 20;8(1):14111. doi: 10.1038/s41598-018-32489-w. PMID: 30237522; PMCID: PMC6147946.
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Sci Rep. 2018 Sep 20;8(1):14111. doi: 10.1038/s41598-018-32489-w.

Intentional polarity conversion of AlN epitaxial layers by oxygen.

Scientific reports

N Stolyarchuk, T Markurt, A Courville, K March, J Zúñiga-Pérez, P Vennéguès, M Albrecht

Affiliations

  1. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489, Berlin, Germany. [email protected].
  2. Université Côte d'Azur, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Rue Bernard Grégory, Sophia Antipolis, 06560, Valbonne, France. [email protected].
  3. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489, Berlin, Germany.
  4. Université Côte d'Azur, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Rue Bernard Grégory, Sophia Antipolis, 06560, Valbonne, France.
  5. Laboratoire de Physique des Solides, Université Paris-Sud, CNRS-UMR 8502, 91405, Orsay, France.

PMID: 30237522 PMCID: PMC6147946 DOI: 10.1038/s41598-018-32489-w

Abstract

Nitride materials (AlN, GaN, InN and their alloys) are commonly used in optoelectronics, high-power and high-frequency electronics. Polarity is the essential characteristic of these materials: when grown along c-direction, the films may exhibit either N- or metal-polar surface, which strongly influences their physical properties. The possibility to manipulate the polarity during growth allows to establish unique polarity in nitride thin films and nanowires for existing applications but also opens up new opportunities for device applications, e.g., in non-linear optics. In this work, we show that the polarity of an AlN film can intentionally be inverted by applying an oxygen plasma. We anneal an initially mixed-polar AlN film, grown on sapphire substrate by metal-organic vapor phase epitaxy (MOVPE), with an oxygen plasma in a molecular beam epitaxy (MBE) chamber; then, back in MOVPE, we deposit a 200 nm thick AlN film on top of the oxygen-treated surface. Analysis by high-resolution probe-corrected scanning transmission electron microscopy (STEM) imaging and electron energy-loss spectroscopy (EELS) evidences a switch of the N-polar domains to metal polarity. The polarity inversion is mediated through the formation of a thin Al

References

  1. Phys Rev Lett. 2003 Feb 7;90(5):056101 - PubMed

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