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Lova P, Robbiano V, Cacialli F, et al. Black GaAs by Metal-Assisted Chemical Etching. ACS Appl Mater Interfaces. 2018;10(39):33434-33440doi: 10.1021/acsami.8b10370.
Lova, P., Robbiano, V., Cacialli, F., Comoretto, D., & Soci, C. (2018). Black GaAs by Metal-Assisted Chemical Etching. ACS applied materials & interfaces, 10(39), 33434-33440. https://doi.org/10.1021/acsami.8b10370
Lova, Paola, et al. "Black GaAs by Metal-Assisted Chemical Etching." ACS applied materials & interfaces vol. 10,39 (2018): 33434-33440. doi: https://doi.org/10.1021/acsami.8b10370
Lova P, Robbiano V, Cacialli F, Comoretto D, Soci C. Black GaAs by Metal-Assisted Chemical Etching. ACS Appl Mater Interfaces. 2018 Oct 03;10(39):33434-33440. doi: 10.1021/acsami.8b10370. Epub 2018 Sep 18. PMID: 30191706.
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ACS Appl Mater Interfaces. 2018 Oct 03;10(39):33434-33440. doi: 10.1021/acsami.8b10370. Epub 2018 Sep 18.

Black GaAs by Metal-Assisted Chemical Etching.

ACS applied materials & interfaces

Paola Lova, Valentina Robbiano, Franco Cacialli, Davide Comoretto, Cesare Soci

Affiliations

  1. Energy Research Institute at NTU (ERI@N) and Interdisciplinary Graduate School , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798.
  2. School of Physical and Mathematical Sciences, Division of Physics and Applied Physics , Nanyang Technological University , 21 Nanyang Link , Singapore 637371.
  3. Department of Physics and Astronomy and London Centre for Nanotechnology , University College London , London WC1E 6BT , United Kingdom.
  4. Dipartimento di Chimica e Chimica Industriale , Università degli Studi di Genova , via Dodecaneso 31 , 16121 Genova , Italy.

PMID: 30191706 DOI: 10.1021/acsami.8b10370

Abstract

Large area surface microstructuring is commonly employed to suppress light reflection and enhance light absorption in silicon photovoltaic devices, photodetectors, and image sensors. To date, however, there are no simple means to control the surface roughness of III-V semiconductors by chemical processes similar to the metal-assisted chemical etching of black Si. Here, we demonstrate the anisotropic metal-assisted chemical etching of GaAs wafers exploiting the lower etching rate of the monoatomic Ga<111> and <311> planes. By studying the dependence of this process on different crystal orientations, we propose a qualitative reaction mechanism responsible for the self-limiting anisotropic etching and show that the reflectance of the roughened surface of black GaAs reduces up to ∼50 times compared to polished wafers, nearly doubling its absorption. This method provides a new, simple, and scalable way to enhance light absorption and power conversion efficiency of GaAs solar cells and photodetectors.

Keywords: III−V semiconductors; anisotropic etching; black GaAs; metal-assisted chemical etching; perfect antireflection

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