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ACS Nano. 2019 Jan 22;13(1):54-60. doi: 10.1021/acsnano.8b06464. Epub 2018 Nov 27.

All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits.

ACS nano

Robyn Worsley, Lorenzo Pimpolari, Daryl McManus, Ning Ge, Robert Ionescu, Jarrid A Wittkopf, Adriana Alieva, Giovanni Basso, Massimo Macucci, Giuseppe Iannaccone, Kostya S Novoselov, Helen Holder, Gianluca Fiori, Cinzia Casiraghi

Affiliations

  1. School of Chemistry , University of Manchester , Manchester M13 9PL , United Kingdom.
  2. Dipartimento di Ingegneria dell'Informazione , Università di Pisa , Pisa 56122 , Italy.
  3. HP Laboratories , 1501 Page Mill Road , Palo Alto , California 94304 , United States.
  4. School of Physics and Astronomy , University of Manchester , Manchester M13 9PL , United Kingdom.

PMID: 30452230 DOI: 10.1021/acsnano.8b06464

Abstract

A well-defined insulating layer is of primary importance in the fabrication of passive ( e.g., capacitors) and active ( e.g., transistors) components in integrated circuits. One of the most widely known two-dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, noncontact approach, which also allows for device design flexibility, produces no material wastage, and offers compatibility with almost any surface of interest, including flexible substrates. In this work, we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 ± 0.3 nF cm

Keywords: 2D-materials; capacitors; inkjet; integrated circuits; printed electronics

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