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Wong S, Haberl B, Johnson BC, et al. Formation of an r8-Dominant Si Material. Phys Rev Lett. 2019;122(10):105701doi: 10.1103/PhysRevLett.122.105701.
Wong, S., Haberl, B., Johnson, B. C., Mujica, A., Guthrie, M., McCallum, J. C., Williams, J. S., & Bradby, J. E. (2019). Formation of an r8-Dominant Si Material. Physical review letters, 122(10), 105701. https://doi.org/10.1103/PhysRevLett.122.105701
Wong, S, et al. "Formation of an r8-Dominant Si Material." Physical review letters vol. 122,10 (2019): 105701. doi: https://doi.org/10.1103/PhysRevLett.122.105701
Wong S, Haberl B, Johnson BC, Mujica A, Guthrie M, McCallum JC, Williams JS, Bradby JE. Formation of an r8-Dominant Si Material. Phys Rev Lett. 2019 Mar 15;122(10):105701. doi: 10.1103/PhysRevLett.122.105701. PMID: 30932683.
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Phys Rev Lett. 2019 Mar 15;122(10):105701. doi: 10.1103/PhysRevLett.122.105701.

Formation of an r8-Dominant Si Material.

Physical review letters

S Wong, B Haberl, B C Johnson, A Mujica, M Guthrie, J C McCallum, J S Williams, J E Bradby

Affiliations

  1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia.
  2. Department of Physics, School of Science, RMIT University, Victoria 3001, Australia.
  3. Neutron Sciences Directorate, Oak Ridge National Laboratory, Neutron Scattering Division, Oak Ridge, Tennessee 37781, USA.
  4. School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia.
  5. Departamento de Fisica, MALTA Consolider Team, Universidad de La Laguna, La Laguna 38206, Tenerife, Spain.
  6. European Spallation Source, Lund, SE-221 00, Sweden.
  7. School of Physics, University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom.

PMID: 30932683 DOI: 10.1103/PhysRevLett.122.105701

Abstract

The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of ∼4  GPa that stabilizes the r8 phase.

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