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Mey O, Wall F, Schneider LM, et al. Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity. ACS Nano. 2019;13(5):5259-5267doi: 10.1021/acsnano.8b09659.
Mey, O., Wall, F., Schneider, L. M., Günder, D., Walla, F., Soltani, A., Roskos, H., Yao, N., Qing, P., Fang, W., & Rahimi-Iman, A. (2019). Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity. ACS nano, 13(5), 5259-5267. https://doi.org/10.1021/acsnano.8b09659
Mey, Oliver, et al. "Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity." ACS nano vol. 13,5 (2019): 5259-5267. doi: https://doi.org/10.1021/acsnano.8b09659
Mey O, Wall F, Schneider LM, Günder D, Walla F, Soltani A, Roskos H, Yao N, Qing P, Fang W, Rahimi-Iman A. Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity. ACS Nano. 2019 May 28;13(5):5259-5267. doi: 10.1021/acsnano.8b09659. Epub 2019 Apr 29. PMID: 31018095.
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ACS Nano. 2019 May 28;13(5):5259-5267. doi: 10.1021/acsnano.8b09659. Epub 2019 Apr 29.

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

ACS nano

Oliver Mey, Franziska Wall, Lorenz Maximilian Schneider, Darius Günder, Frederik Walla, Amin Soltani, Hartmut Roskos, Ni Yao, Peng Qing, Wei Fang, Arash Rahimi-Iman

Affiliations

  1. Department of Physics and Materials Sciences Center , Philipps-Universität Marburg , 35032 Marburg , Germany.
  2. Physikalisches Institut , Johann Wolfgang Goethe-Universität , 60438 Frankfurt am Main , Germany.
  3. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering , Zhejiang University , Hangzhou 310027 , China.

PMID: 31018095 DOI: 10.1021/acsnano.8b09659

Abstract

Light-matter interactions with two-dimensional materials gained significant attention in recent years, leading to the reporting of weak and strong coupling regimes and effective nanolaser operation with various structures. Particularly, future applications involving monolayer materials in waveguide-coupled on-chip-integrated circuitry and valleytronic nanophotonics require controlling, directing, and optimizing photoluminescence. In this context, photoluminescence enhancement from monolayer transition-metal dichalcogenides on patterned semiconducting substrates becomes attractive. It is demonstrated in our work using focused-ion-beam-etched GaP and monolayer WS

Keywords: in-plane microcavity; monolayer excitons; multiple-reflection model; photoluminescence enhancement; scattering-type scanning near-field optical microscopy; transition-metal dichalcogenides; two-dimensional materials

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