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Hijazi H, Monier G, Gil E, et al. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?. Nano Lett. 2019;19(7):4498-4504doi: 10.1021/acs.nanolett.9b01308.
Hijazi, H., Monier, G., Gil, E., Trassoudaine, A., Bougerol, C., Leroux, C., Castellucci, D., Robert-Goumet, C., Hoggan, P. E., André, Y., Isik Goktas, N., LaPierre, R. R., & Dubrovskii, V. G. (2019). Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?. Nano letters, 19(7), 4498-4504. https://doi.org/10.1021/acs.nanolett.9b01308
Hijazi, Hadi, et al. "Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?." Nano letters vol. 19,7 (2019): 4498-4504. doi: https://doi.org/10.1021/acs.nanolett.9b01308
Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?. Nano Lett. 2019 Jul 10;19(7):4498-4504. doi: 10.1021/acs.nanolett.9b01308. Epub 2019 Jun 20. PMID: 31203632.
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Nano Lett. 2019 Jul 10;19(7):4498-4504. doi: 10.1021/acs.nanolett.9b01308. Epub 2019 Jun 20.

Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?.

Nano letters

Hadi Hijazi, Guillaume Monier, Evelyne Gil, Agnès Trassoudaine, Catherine Bougerol, Christine Leroux, Dominique Castellucci, Christine Robert-Goumet, Philip E Hoggan, Yamina André, Nebile Isik Goktas, Ray R LaPierre, Vladimir G Dubrovskii

Affiliations

  1. Université Clermont Auvergne, CNRS, SIGMA Clermont , Institut Pascal , F-63000 Clermont-Ferrand , France.
  2. Université Grenoble Alpes, CNRS , Institut Néel , 38000 Grenoble France.
  3. Université de Toulon, AMU, CNRS, IM2NP, CS 60584 , Toulon Cedex 9, F-83041 , France.
  4. Department of Engineering Physics , McMaster University , Hamilton , Ontario Canada , L8S4L7.
  5. ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia.

PMID: 31203632 DOI: 10.1021/acs.nanolett.9b01308

Abstract

The incorporation of Si into vapor-liquid-solid GaAs nanowires often leads to p-type doping, whereas it is routinely used as an n-dopant of planar layers. This property limits the applications of GaAs nanowires in electronic and optoelectronic devices. The strong amphoteric behavior of Si in nanowires is not yet fully understood. Here, we present the first attempt to quantify this behavior as a function of the droplet composition and temperature. It is shown that the doping type critically depends on the As/Ga ratio in the droplet. In sharp contrast to vapor-solid growth, the droplet contains very few As atoms, which enhance their reverse transfer from solid to liquid. As a result, Si atoms preferentially replace As in GaAs, leading to p-type doping in nanowires. Hydride vapor phase epitaxy provides the highest As concentrations in the catalyst droplets during their vapor-liquid-solid growth, resulting in n-type dopant behavior of Si. We present experimental data on n-doped Si-doped GaAs nanowires grown by this method and explain the doping within our model. These results give a clear route for obtaining n-type or p-type Si doping in GaAs nanowires and may be extended to other III-V nanowires.

Keywords: Doping; gallium arsenide nanowires; hydride vapor phase epitaxy; molecular beam epitaxy; silicon; vapor−liquid−solid

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