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de Bruijckere J, Gehring P, Palacios-Corella M, et al. Ground-State Spin Blockade in a Single-Molecule Junction. Phys Rev Lett. 2019;122(19):197701doi: 10.1103/PhysRevLett.122.197701.
de Bruijckere, J., Gehring, P., Palacios-Corella, M., Clemente-León, M., Coronado, E., Paaske, J., Hedegård, P., & van der Zant, H. S. J. (2019). Ground-State Spin Blockade in a Single-Molecule Junction. Physical review letters, 122(19), 197701. https://doi.org/10.1103/PhysRevLett.122.197701
de Bruijckere, J, et al. "Ground-State Spin Blockade in a Single-Molecule Junction." Physical review letters vol. 122,19 (2019): 197701. doi: https://doi.org/10.1103/PhysRevLett.122.197701
de Bruijckere J, Gehring P, Palacios-Corella M, Clemente-León M, Coronado E, Paaske J, Hedegård P, van der Zant HSJ. Ground-State Spin Blockade in a Single-Molecule Junction. Phys Rev Lett. 2019 May 17;122(19):197701. doi: 10.1103/PhysRevLett.122.197701. PMID: 31144938.
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Phys Rev Lett. 2019 May 17;122(19):197701. doi: 10.1103/PhysRevLett.122.197701.

Ground-State Spin Blockade in a Single-Molecule Junction.

Physical review letters

J de Bruijckere, P Gehring, M Palacios-Corella, M Clemente-León, E Coronado, J Paaske, P Hedegård, H S J van der Zant

Affiliations

  1. Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands.
  2. Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán 2, Paterna, 46980, Spain.
  3. Niels Bohr Institute, University of Copenhagen, DK-2100 Copenhagen, Denmark.
  4. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, DK-2100 Copenhagen, Denmark.

PMID: 31144938 DOI: 10.1103/PhysRevLett.122.197701

Abstract

It is known that the quantum mechanical ground state of a nanoscale junction has a significant impact on its electrical transport properties. This becomes particularly important in transistors consisting of a single molecule. Because of strong electron-electron interactions and the possibility of accessing ground states with high spins, these systems are eligible hosts of a current-blockade phenomenon called a ground-state spin blockade. This effect arises from the inability of a charge carrier to account for the spin difference required to enter the junction, as that process would violate the spin selection rules. Here, we present a direct experimental demonstration of a ground-state spin blockade in a high-spin single-molecule transistor. The measured transport characteristics of this device exhibit a complete suppression of resonant transport due to a ground-state spin difference of 3/2 between subsequent charge states. Strikingly, the blockade can be reversibly lifted by driving the system through a magnetic ground-state transition in one charge state, using the tunability offered by both magnetic and electric fields.

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