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Ma R, Zhang H, Yoo Y, et al. MoTe. ACS Nano. 2019;13(7):8035-8046doi: 10.1021/acsnano.9b02785.
Ma, R., Zhang, H., Yoo, Y., Degregorio, Z. P., Jin, L., Golani, P., Ghasemi Azadani, J., Low, T., Johns, J. E., Bendersky, L. A., Davydov, A. V., & Koester, S. J. (2019). MoTe. ACS nano, 13(7), 8035-8046. https://doi.org/10.1021/acsnano.9b02785
Ma, Rui, et al. "MoTe." ACS nano vol. 13,7 (2019): 8035-8046. doi: https://doi.org/10.1021/acsnano.9b02785
Ma R, Zhang H, Yoo Y, Degregorio ZP, Jin L, Golani P, Ghasemi Azadani J, Low T, Johns JE, Bendersky LA, Davydov AV, Koester SJ. MoTe. ACS Nano. 2019 Jul 23;13(7):8035-8046. doi: 10.1021/acsnano.9b02785. Epub 2019 Jul 02. PMID: 31247141.
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ACS Nano. 2019 Jul 23;13(7):8035-8046. doi: 10.1021/acsnano.9b02785. Epub 2019 Jul 02.

MoTe.

ACS nano

Rui Ma, Huairuo Zhang, Youngdong Yoo, Zachary Patrick Degregorio, Lun Jin, Prafful Golani, Javad Ghasemi Azadani, Tony Low, James E Johns, Leonid A Bendersky, Albert V Davydov, Steven J Koester

Affiliations

  1. Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States.
  2. Theiss Research, Inc. , La Jolla , California 92037 , United States.
  3. Materials Science and Engineering Division , National Institute of Standards and Technology (NIST) , Gaithersburg , Maryland 20899 , United States.
  4. Department of Chemistry , Ajou University , Suwon 16499 , Korea.
  5. Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 , United States.

PMID: 31247141 DOI: 10.1021/acsnano.9b02785

Abstract

The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in TMDC-based field effect transistors (FETs). A semiconducting hexagonal (2H) molybdenum ditelluride (MoTe

Keywords: MoTe; Schottky barrier height; chemical vapor deposition; lateral homojunction; phase engineering; transition-metal dichalcogenide

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