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Dagher R, Lymperakis L, Delaye V, et al. Al. Sci Rep. 2019;9(1):15907doi: 10.1038/s41598-019-52363-7.
Dagher, R., Lymperakis, L., Delaye, V., Largeau, L., Michon, A., Brault, J., & Vennéguès, P. (2019). Al. Scientific reports, 9(1), 15907. https://doi.org/10.1038/s41598-019-52363-7
Dagher, R, et al. "Al." Scientific reports vol. 9,1 (2019): 15907. doi: https://doi.org/10.1038/s41598-019-52363-7
Dagher R, Lymperakis L, Delaye V, Largeau L, Michon A, Brault J, Vennéguès P. Al. Sci Rep. 2019 Nov 04;9(1):15907. doi: 10.1038/s41598-019-52363-7. PMID: 31685888; PMCID: PMC6828660.
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Sci Rep. 2019 Nov 04;9(1):15907. doi: 10.1038/s41598-019-52363-7.

Al.

Scientific reports

R Dagher, L Lymperakis, V Delaye, L Largeau, A Michon, J Brault, P Vennéguès

Affiliations

  1. Université Côte d'Azur, CRHEA-CNRS, rue B. Grégory, F-06560, Valbonne, France.
  2. Université Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054, Grenoble, France.
  3. Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf, Germany.
  4. C2N-CNRS/Université Paris-Sud - Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120, Palaiseau, France.
  5. Université Côte d'Azur, CRHEA-CNRS, rue B. Grégory, F-06560, Valbonne, France. [email protected].

PMID: 31685888 PMCID: PMC6828660 DOI: 10.1038/s41598-019-52363-7

Abstract

The family of III-Nitride semiconductors has been under intensive research for almost 30 years and has revolutionized lighting applications at the dawn of the 21st century. However, besides the developments and applications achieved, nitride alloys continue to fuel the quest for novel materials and applications. We report on the synthesis of a new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350 °C and 1550 °C. The structure and stoichiometry of this compound are investigated by high resolution transmission electron microscopy (TEM) techniques and energy dispersive X-Ray (EDX) spectroscopy. Results are supported by density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where the anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>: The first one exhibits a ×3 periodicity along <11-20> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by an equal number of Si and Al atoms. Assuming a semiconducting alloy, a range of stoichiometries is proposed, Al

References

  1. Phys Rev B Condens Matter. 1993 Jan 1;47(1):558-561 - PubMed
  2. Phys Rev Lett. 2013 Jan 18;110(3):036103 - PubMed
  3. Phys Rev B Condens Matter. 1996 Oct 15;54(16):11169-11186 - PubMed

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