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Lähderanta E, Lebedev AA, Shakhov MA, et al. Low-temperature quantum magnetotransport of graphene on SiC (0 0 0 1) in pulsed magnetic fields up to 30 T. J Phys Condens Matter. 2019;32(11):115704doi: 10.1088/1361-648X/ab5bb6.
Lähderanta, E., Lebedev, A. A., Shakhov, M. A., Stamov, V. N., Lisunov, K. G., & Lebedev, S. P. (2020). Low-temperature quantum magnetotransport of graphene on SiC (0 0 0 1) in pulsed magnetic fields up to 30 T. Journal of physics. Condensed matter : an Institute of Physics journal, 32(11), 115704. https://doi.org/10.1088/1361-648X/ab5bb6
Lähderanta, E, et al. "Low-temperature quantum magnetotransport of graphene on SiC (0 0 0 1) in pulsed magnetic fields up to 30 T." Journal of physics. Condensed matter : an Institute of Physics journal vol. 32,11 (2020): 115704. doi: https://doi.org/10.1088/1361-648X/ab5bb6
Lähderanta E, Lebedev AA, Shakhov MA, Stamov VN, Lisunov KG, Lebedev SP. Low-temperature quantum magnetotransport of graphene on SiC (0 0 0 1) in pulsed magnetic fields up to 30 T. J Phys Condens Matter. 2020 Mar 13;32(11):115704. doi: 10.1088/1361-648X/ab5bb6. Epub 2019 Nov 26. PMID: 31770736.
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J Phys Condens Matter. 2020 Mar 13;32(11):115704. doi: 10.1088/1361-648X/ab5bb6. Epub 2019 Nov 26.

Low-temperature quantum magnetotransport of graphene on SiC (0 0 0 1) in pulsed magnetic fields up to 30 T.

Journal of physics. Condensed matter : an Institute of Physics journal

E Lähderanta, A A Lebedev, M A Shakhov, V N Stamov, K G Lisunov, S P Lebedev

Affiliations

  1. Department of Physics, LUT University, PO Box 20, FIN-53851, Lappeenranta, Finland.

PMID: 31770736 DOI: 10.1088/1361-648X/ab5bb6

Abstract

Resistivity, ρ(T), and magnetoresistance (MR) are investigated in graphene grown on SiC (0 0 0 1), at temperatures between T ~ 4-85 K in pulsed magnetic fields of B up to 30 T. According to the Raman spectroscopy and Kelvin-probe microscopy data, the material is a single-layer graphene containing ~20% double-layer islands with a submicron scale and relatively high amount of intrinsic defects. The dependence of ρ(T) exhibits a minimum at temperature T

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