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Hamelin B, Yang J, Daruwalla A, et al. Monocrystalline Silicon Carbide Disk Resonators on Phononic Crystals with Ultra-Low Dissipation Bulk Acoustic Wave Modes. Sci Rep. 2019;9(1):18698doi: 10.1038/s41598-019-54278-9.
Hamelin, B., Yang, J., Daruwalla, A., Wen, H., & Ayazi, F. (2019). Monocrystalline Silicon Carbide Disk Resonators on Phononic Crystals with Ultra-Low Dissipation Bulk Acoustic Wave Modes. Scientific reports, 9(1), 18698. https://doi.org/10.1038/s41598-019-54278-9
Hamelin, Benoit, et al. "Monocrystalline Silicon Carbide Disk Resonators on Phononic Crystals with Ultra-Low Dissipation Bulk Acoustic Wave Modes." Scientific reports vol. 9,1 (2019): 18698. doi: https://doi.org/10.1038/s41598-019-54278-9
Hamelin B, Yang J, Daruwalla A, Wen H, Ayazi F. Monocrystalline Silicon Carbide Disk Resonators on Phononic Crystals with Ultra-Low Dissipation Bulk Acoustic Wave Modes. Sci Rep. 2019 Dec 10;9(1):18698. doi: 10.1038/s41598-019-54278-9. PMID: 31822789; PMCID: PMC6904713.
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Sci Rep. 2019 Dec 10;9(1):18698. doi: 10.1038/s41598-019-54278-9.

Monocrystalline Silicon Carbide Disk Resonators on Phononic Crystals with Ultra-Low Dissipation Bulk Acoustic Wave Modes.

Scientific reports

Benoit Hamelin, Jeremy Yang, Anosh Daruwalla, Haoran Wen, Farrokh Ayazi

Affiliations

  1. Department of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332, USA. [email protected].
  2. School of Physics, Georgia Institute of Technology, 837 State Street, Atlanta, GA, 30332, USA.
  3. Department of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332, USA.

PMID: 31822789 PMCID: PMC6904713 DOI: 10.1038/s41598-019-54278-9

Abstract

Micromechanical resonators with ultra-low energy dissipation are essential for a wide range of applications, such as navigation in GPS-denied environments. Routinely implemented in silicon (Si), their energy dissipation often reaches the quantum limits of Si, which can be surpassed by using materials with lower intrinsic loss. This paper explores dissipation limits in 4H monocrystalline silicon carbide-on-insulator (4H-SiCOI) mechanical resonators fabricated at wafer-level, and reports on ultra-high quality-factors (Q) in gyroscopic-mode disk resonators. The SiC disk resonators are anchored upon an acoustically-engineered Si substrate containing a phononic crystal which suppresses anchor loss and promises Q

References

  1. Sci Rep. 2015 Nov 20;5:17005 - PubMed
  2. Nat Nanotechnol. 2017 Aug;12(8):776-783 - PubMed
  3. Nat Commun. 2014 Nov 17;5:5158 - PubMed
  4. Sci Rep. 2019 Feb 19;9(1):2244 - PubMed
  5. Sci Rep. 2013 Nov 19;3:3244 - PubMed
  6. Microsyst Nanoeng. 2017 Apr 24;3:16092 - PubMed
  7. Nature. 2013 Nov 14;503(7475):209-17 - PubMed
  8. Microsyst Nanoeng. 2016 Apr 25;2:16015 - PubMed

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