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Quintero A, Gergaud P, Hartmann JM, et al. Impact and behavior of Sn during the Ni/GeSn solid-state reaction. J Appl Crystallogr. 2020;53:605-613doi: 10.1107/S1600576720003064.
Quintero, A., Gergaud, P., Hartmann, J. M., Delaye, V., Reboud, V., Cassan, E., & Rodriguez, P. (2020). Impact and behavior of Sn during the Ni/GeSn solid-state reaction. Journal of applied crystallography, 53605-613. https://doi.org/10.1107/S1600576720003064
Quintero, Andrea, et al. "Impact and behavior of Sn during the Ni/GeSn solid-state reaction." Journal of applied crystallography vol. 53 (2020): 605-613. doi: https://doi.org/10.1107/S1600576720003064
Quintero A, Gergaud P, Hartmann JM, Delaye V, Reboud V, Cassan E, Rodriguez P. Impact and behavior of Sn during the Ni/GeSn solid-state reaction. J Appl Crystallogr. 2020 Apr 14;53:605-613. doi: 10.1107/S1600576720003064. eCollection 2020 Jun 01. PMID: 32684875; PMCID: PMC7312141.
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J Appl Crystallogr. 2020 Apr 14;53:605-613. doi: 10.1107/S1600576720003064. eCollection 2020 Jun 01.

Impact and behavior of Sn during the Ni/GeSn solid-state reaction.

Journal of applied crystallography

Andrea Quintero, Patrice Gergaud, Jean-Michel Hartmann, Vincent Delaye, Vincent Reboud, Eric Cassan, Philippe Rodriguez

Affiliations

  1. Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.
  2. Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.

PMID: 32684875 PMCID: PMC7312141 DOI: 10.1107/S1600576720003064

Abstract

Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out.

© International Union of Crystallography 2020.

Keywords: GeSn; Ni; Sn segregation; X-ray diffraction; solid-state reaction; transmission electron microscopy

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