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Kafar A, Ishii R, Gibasiewicz K, et al. Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes. Opt Express. 2020;28(15):22524-22539doi: 10.1364/OE.394580.
Kafar, A., Ishii, R., Gibasiewicz, K., Matsuda, Y., Stanczyk, S., Schiavon, D., Grzanka, S., Tano, M., Sakaki, A., Suski, T., Perlin, P., Funato, M., & Kawakami, Y. (2020). Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes. Optics express, 28(15), 22524-22539. https://doi.org/10.1364/OE.394580
Kafar, A, et al. "Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes." Optics express vol. 28,15 (2020): 22524-22539. doi: https://doi.org/10.1364/OE.394580
Kafar A, Ishii R, Gibasiewicz K, Matsuda Y, Stanczyk S, Schiavon D, Grzanka S, Tano M, Sakaki A, Suski T, Perlin P, Funato M, Kawakami Y. Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes. Opt Express. 2020 Jul 20;28(15):22524-22539. doi: 10.1364/OE.394580. PMID: 32752512.
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Opt Express. 2020 Jul 20;28(15):22524-22539. doi: 10.1364/OE.394580.

Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes.

Optics express

A Kafar, R Ishii, K Gibasiewicz, Y Matsuda, S Stanczyk, D Schiavon, S Grzanka, M Tano, A Sakaki, T Suski, P Perlin, M Funato, Y Kawakami

PMID: 32752512 DOI: 10.1364/OE.394580

Abstract

We report a thorough study of InGaN quantum wells spatially modified by varying the local misorientation of the GaN substrate prior to the epitaxial growth of the structure. More than 25 nm shift of emission wavelength was obtained, which is attributed to indium content changes in the quantum wells. Such an active region is promising for broadening of the emission spectrum of (In,Al,Ga)N superluminescent diodes. We observed that the light intensity changes with misorientation, being stable around 0.5° to 2° and decreasing above 2°. This relation can be used as a base for future device designing.

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