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Wang HS, Chen L, Elibol K, et al. Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride. Nat Mater. 2020;20(2):202-207doi: 10.1038/s41563-020-00806-2.
Wang, H. S., Chen, L., Elibol, K., He, L., Wang, H., Chen, C., Jiang, C., Li, C., Wu, T., Cong, C. X., Pennycook, T. J., Argentero, G., Zhang, D., Watanabe, K., Taniguchi, T., Wei, W., Yuan, Q., Meyer, J. C., & Xie, X. (2021). Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride. Nature materials, 20(2), 202-207. https://doi.org/10.1038/s41563-020-00806-2
Wang, Hui Shan, et al. "Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride." Nature materials vol. 20,2 (2021): 202-207. doi: https://doi.org/10.1038/s41563-020-00806-2
Wang HS, Chen L, Elibol K, He L, Wang H, Chen C, Jiang C, Li C, Wu T, Cong CX, Pennycook TJ, Argentero G, Zhang D, Watanabe K, Taniguchi T, Wei W, Yuan Q, Meyer JC, Xie X. Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride. Nat Mater. 2021 Feb;20(2):202-207. doi: 10.1038/s41563-020-00806-2. Epub 2020 Sep 21. PMID: 32958881.
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Nat Mater. 2021 Feb;20(2):202-207. doi: 10.1038/s41563-020-00806-2. Epub 2020 Sep 21.

Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride.

Nature materials

Hui Shan Wang, Lingxiu Chen, Kenan Elibol, Li He, Haomin Wang, Chen Chen, Chengxin Jiang, Chen Li, Tianru Wu, Chun Xiao Cong, Timothy J Pennycook, Giacomo Argentero, Daoli Zhang, Kenji Watanabe, Takashi Taniguchi, Wenya Wei, Qinghong Yuan, Jannik C Meyer, Xiaoming Xie

Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, P. R. China.
  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China.
  3. CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, P. R. China.
  4. Faculty of Physics, University of Vienna, Vienna, Austria.
  5. School of Chemistry, CRANN - Advanced Microscopy Laboratory, Trinity College Dublin, Dublin, Ireland.
  6. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, P. R. China.
  7. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, P. R. China. [email protected].
  8. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China. [email protected].
  9. CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, P. R. China. [email protected].
  10. School of Physical Science and Technology, ShanghaiTech University, Shanghai, P. R. China.
  11. Department of Lithospheric Research, University of Vienna, Vienna, Austria.
  12. Electron Microscopy for Materials Research (EMAT), University of Antwerpen, Antwerpen, Belgium.
  13. State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, P. R. China.
  14. National Institute for Materials Science, Tsukuba, Japan.
  15. State Key Laboratory of Precision Spectroscopy, School of Physics and Material Science, East China Normal University, Shanghai, P. R. China.
  16. Centre for Theoretical and Computational Molecular Science, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Australia.
  17. Faculty of Physics, University of Vienna, Vienna, Austria. [email protected].
  18. Institute of Applied Physics, University of Tübingen, Tübingen, Germany. [email protected].

PMID: 32958881 DOI: 10.1038/s41563-020-00806-2

Abstract

The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN. Further transport measurements reveal that the sub-7-nm-wide zigzag GNRs exhibit openings of the bandgap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. An obvious conductance peak is observed in the transfer curves of 8- to 10-nm-wide zigzag GNRs, while it is absent in most armchair GNRs. Zigzag GNRs exhibit a small magnetic conductance, while armchair GNRs have much higher magnetic conductance values. This integrated lateral growth of edge-specific GNRs in h-BN provides a promising route to achieve intricate nanoscale circuits.

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