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Abo Ghazala MS, Othman HA, Sharaf El-Deen LM, et al. Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation. ACS Omega. 2020;5(42):27633-27644doi: 10.1021/acsomega.0c04206.
Abo Ghazala, M. S., Othman, H. A., Sharaf El-Deen, L. M., Nawwar, M. A., & Kashyout, A. E. B. (2020). Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation. ACS omega, 5(42), 27633-27644. https://doi.org/10.1021/acsomega.0c04206
Abo Ghazala, Magdy S, et al. "Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation." ACS omega vol. 5,42 (2020): 27633-27644. doi: https://doi.org/10.1021/acsomega.0c04206
Abo Ghazala MS, Othman HA, Sharaf El-Deen LM, Nawwar MA, Kashyout AEB. Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation. ACS Omega. 2020 Oct 16;5(42):27633-27644. doi: 10.1021/acsomega.0c04206. eCollection 2020 Oct 27. PMID: 33134727; PMCID: PMC7594337.
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ACS Omega. 2020 Oct 16;5(42):27633-27644. doi: 10.1021/acsomega.0c04206. eCollection 2020 Oct 27.

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation.

ACS omega

Magdy S Abo Ghazala, Hosam A Othman, Lobna M Sharaf El-Deen, Mohamed A Nawwar, Abd El-Hady B Kashyout

Affiliations

  1. Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt.
  2. Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), New Borg El-Arab City, Alexandria 21934, Egypt.

PMID: 33134727 PMCID: PMC7594337 DOI: 10.1021/acsomega.0c04206

Abstract

Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV-vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications.

© 2020 American Chemical Society.

Conflict of interest statement

The authors declare no competing financial interest.

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